Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Mingzeng Peng"'
Autor:
Feng Tian, Delin Kong, Peng Qiu, Heng Liu, Xiaoli Zhu, Huiyun Wei, Yimeng Song, Hong Chen, Xinhe Zheng, Mingzeng Peng
Publikováno v:
Crystals, Vol 13, Iss 4, p 563 (2023)
As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dime
Externí odkaz:
https://doaj.org/article/5e746ed6bd004a78b47e7eae64ee0016
Autor:
Yunlai An, Yingfeng He, Huiyun Wei, Sanjie Liu, Meiling Li, Yimeng Song, Peng Qiu, Abdul Rehman, Xinhe Zheng, Mingzeng Peng
Publikováno v:
Results in Physics, Vol 12, Iss , Pp 804-809 (2019)
InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of InN on Si(1 0 0) easily happens at the initial PEALD period. The PEALD parameters have been syst
Externí odkaz:
https://doaj.org/article/34f05a0df3154ae7b1a304b6cb799cdb
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, th
Externí odkaz:
https://doaj.org/article/35618187562b42068ed5c0ec8be3ff92
Autor:
Yimeng Song, Yangfeng Li, Yingfeng He, Huiyun Wei, Peng Qiu, Xiaotao Hu, Zhaole Su, Yang Jiang, Mingzeng Peng, Xinhe Zheng
Publikováno v:
ACS Applied Materials & Interfaces. 14:16866-16875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7fa049aad41b5e99bf939d7ca06a7eb
https://doi.org/10.1021/acsami.2c00824
https://doi.org/10.1021/acsami.2c00824
Publikováno v:
Ceramics International. 48:5876-5891
Hybrid lead halide perovskite solar cells (PSCs) have experienced a rapid development in the past decade and a certified efficiency up to 25.5% has been achieved. However, the presence of toxic lead component and the inherent poor thermal stability o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::223c284df6c9b470460ee9bd87852dd2
https://doi.org/10.1016/j.ceramint.2021.11.184
https://doi.org/10.1016/j.ceramint.2021.11.184
Autor:
Chengtao Shen, Feng Tian, Peng Qiu, Yingfeng He, Huiyun Wei, Yimeng Song, Ye Li, Heng Liu, Xiaoli Zhu, Xinhe Zheng, Mingzeng Peng
Publikováno v:
Materials Today Communications. 35:105528
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2249a01405ddfa63d82851b6d452c12f
https://doi.org/10.1016/j.mtcomm.2023.105528
https://doi.org/10.1016/j.mtcomm.2023.105528
Autor:
Huiyun Wei, Peiyuan Guo, Xinhe Zheng, Mingzeng Peng, Yingfeng He, Peng Qiu, Jinye Xie, Ke Yan, Yimeng Song, Hao Wang
Publikováno v:
Ceramics International. 47:9418-9423
Alloying strategy in quantum dots (QDs) has shown great advantages in regulating photophysical properties and improving the performance of photovoltaic devices. Typically, CdSeTe alloy QD is proved to be a superior photosensitizer, and has presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d58261e9887db75db17a88feb3d0488
https://doi.org/10.1016/j.ceramint.2020.12.074
https://doi.org/10.1016/j.ceramint.2020.12.074
Autor:
Yimeng Song, Huiyun Wei, Qianming Huang, Mingzeng Peng, Yangfeng Li, Yingfeng He, Peng Qiu, Zhiquan He, Xinhe Zheng, Junhui Die
Publikováno v:
Crystal Growth & Design. 21:1778-1785
GaN thin films have been directly grown on monolayer MoS2 by plasma-enhanced atomic layer deposition at 260 °C using triethylgallium as the gallium precursor along with Ar/N2/H2 plasma for the firs...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9746b0f4804b44709eb69a8325981d02
https://doi.org/10.1021/acs.cgd.0c01650
https://doi.org/10.1021/acs.cgd.0c01650
Autor:
Lang Zhou, Wenxin Du, Zengxuan Jiang, Chuang Gao, Sanjie Liu, Huiyun Wei, Xinhe Zheng, Yunlai An, Yingfeng He, Qixin Wu, Peng Qiu, Mingzeng Peng, Yimeng Song
Publikováno v:
Ceramics International. 46:5765-5772
To serve as an electron transport layer (ETL) or a buffer layer for the third-generation solar cells, a compact and uniform gallium nitride (GaN) thin layer with suitable energy level is needed. Meanwhile, it is also meaningful to explore its low-tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70848e0791d48423c6a4bdb0ff60a063
https://doi.org/10.1016/j.ceramint.2019.11.026
https://doi.org/10.1016/j.ceramint.2019.11.026
Publikováno v:
Reports on Progress in Physics. 86:026402
The discovery of two-dimensional (2D) materials has gained worldwide attention owing to their extraordinary optical, electrical, and mechanical properties. Due to their atomic layer thicknesses, the emerging 2D materials have great advantages of enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dafac503f392d5dbfb31572d9ed5c295
https://doi.org/10.1088/1361-6633/ac953e
https://doi.org/10.1088/1361-6633/ac953e