Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Mingxing Piao"'
Publikováno v:
Nanomaterials, Vol 14, Iss 14, p 1194 (2024)
The rational design of magnetic carbon composites, encompassing both their composition and microstructure, holds significant potential for achieving exceptional electromagnetic wave-absorbing materials (EAMs). In this study, FeCo@CM composites were e
Externí odkaz:
https://doaj.org/article/b11ace11e79a4a1384019529f438c37a
Publikováno v:
Nanomaterials, Vol 8, Iss 6, p 414 (2018)
Graphene nanowalls (GNWs) with different sizes (i.e., length and height) were grown directly on the surface of individual carbon fibers (CFs) using a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique. The size was control
Externí odkaz:
https://doaj.org/article/b98bf6c0beef410d9fdc93fd91ebc69f
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
SSRN Electronic Journal.
Autor:
Lina Ren, Kamile Arkin, Jiawei Hao, Mingxing Piao, Yuxin Zheng, Jinyu Zhang, Qingkun Shang, Ning Xu
Publikováno v:
Talanta. 201:309-316
Two different colors of water-soluble core-shell quantum dots CdTe/CdS (green and orange red) have been synthesized and characterized in this paper. The formation of core-shell quantum dots not only improves the fluorescence quantum yield, but also r
Publikováno v:
Journal of Materials Science. May2018, Vol. 53 Issue 10, p7648-7656. 9p. 1 Diagram, 5 Graphs.
Publikováno v:
Energy Technology. 6:1921-1928
Publikováno v:
Journal of Materials Science. 53:7648-7656
Single-walled carbon nanotubes (SWCNTs) networks have attracted great attention for electronic and energy-harvesting applications, including thermoelectric (TE) devices. However, the simultaneous production of metallic SWCNTs (m-SWCTNs) and semicondu
Autor:
Min Yeul Ryu, Ho Kyun Jang, Gyu Tae Kim, Mingxing Piao, Minju Shin, Junghwan Huh, Kookjin Lee, Seung Pil Ko
Publikováno v:
Physical Chemistry Chemical Physics. 19:13133-13139
Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type cha