Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Mingxing Du"'
Publikováno v:
IEEE Access, Vol 7, Pp 47525-47534 (2019)
Condition monitoring (CM) of insulated-gate bipolar transistor (IGBT) modules is significant for improving power converter reliability and reducing the loss caused by IGBT failure. In this paper, we present an advanced method to evaluate the aging co
Externí odkaz:
https://doaj.org/article/7dbe4a8c01614077b71b0dea668c26df
Publikováno v:
Case Studies in Thermal Engineering, Vol 14, Iss , Pp - (2019)
In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described. Based on the FEA, the transient thermal cha
Externí odkaz:
https://doaj.org/article/b1c002bb41384626947bbd6ba4a33ccc
Publikováno v:
Materials Research Express, Vol 8, Iss 6, p 066515 (2021)
CuCr alloy with high Cr content (20–50 wt.%) is the main contact material for medium voltage and high current vacuum interrupters. However, the influence of network distribution of Cr particles affect the conductivity of CuCr alloy, and its propert
Externí odkaz:
https://doaj.org/article/898dda24e2b3492c904037a62511dcb9
Publikováno v:
Energies, Vol 14, Iss 3, p 684 (2021)
Non-intrusive load monitoring (NILM) is an important research direction and development goal on the distribution side of smart grid, which can significantly improve the timeliness of demand side response and users’ awareness of load. Due to rapid d
Externí odkaz:
https://doaj.org/article/4d07031e1bde4f08b93ecd202de263c8
Publikováno v:
Energies, Vol 12, Iss 21, p 4024 (2019)
The thermal characteristics of the positive leader discharges occurring under the different electrode terminals in a 1 m rod-plate air gap were studied quantitatively using Mach−Zehnder interferometry and a high-speed video camera. When disturbed b
Externí odkaz:
https://doaj.org/article/2e1f940150b14751a02dc1417cac561b
Publikováno v:
Energies, Vol 12, Iss 9, p 1791 (2019)
On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it
Externí odkaz:
https://doaj.org/article/612b26eef557442e89f1093dd4133a99
Publikováno v:
Energies, Vol 12, Iss 5, p 851 (2019)
The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working
Externí odkaz:
https://doaj.org/article/48e1d06976e94f3698b8490c0a95b5e5
Publikováno v:
Energies, Vol 11, Iss 3, p 595 (2018)
This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient
Externí odkaz:
https://doaj.org/article/d200c00e4fd148bf86df00339ba95179
Autor:
Mingxing Du, Guosheng Xu
Publikováno v:
MATEC Web of Conferences, Vol 31, p 00001 (2015)
Externí odkaz:
https://doaj.org/article/960516062c644adda63f2be72f17308e
Publikováno v:
Journal of Power Electronics. 23:688-699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a247d860dffe983b44b0c00497d757
https://doi.org/10.1007/s43236-022-00562-3
https://doi.org/10.1007/s43236-022-00562-3