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pro vyhledávání: '"Mingu Gang"'
Autor:
Won-Hwa Park, Youngil Jang, Hui-Youn Shin, Myungshin Choi, Kisung Jeon, Mingu Gang, Kyuho Park
Publikováno v:
Journal of the Korean Physical Society. 63:1621-1624
Due to the large differences in the lattice constants and the thermal expansion coefficients between GaN and Si, GaN growth on a Si substrate usually leads initially to high defect densities and cracks. If high-quality GaN films on Si substrate are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72db737df0ed8789c821e1faa0c2c97
https://doi.org/10.3938/jkps.63.1621
https://doi.org/10.3938/jkps.63.1621
