Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Mingsai Zhu"'
Publikováno v:
Micro and Nano Engineering, Vol 13, Iss , Pp 100091- (2021)
High electron mobility transistors (HEMTs) are the basic building block in microwave monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz), millimeter (100–300 GHz) and tera [1] hertz (300 GHz–10 THz) wave.
Externí odkaz:
https://doaj.org/article/4a83720ba6964fa6be8c1ccca983dc5e
Autor:
Tao Liu, Xujie Tong, Shuoqiu Tian, Yuying Xie, Mingsai Zhu, Bo Feng, Xiaohang Pan, Rui Zheng, Shan Wu, Ding Zhao, Yifang Chen, Bingrui Lu, Min Qiu
Publikováno v:
Nanoscale. 14(25)
Due to the perfection of the nanofabrication in nanotechnology and nanoscience, ice lithography (IL) by patterning ice thin-films with a focused electron beam, as a significant derivative technology of electron beam lithography (EBL), is attracting g
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Background: Fast advancing of microwave/terahertz communication constantly demands ultrashort T-shaped gates by innovative nanofabrication techniques. The emerging RE650 resist provides a promising alternative to existing resists owing to its outstan
Publikováno v:
Microelectronic Engineering. 253:111675
Autor:
Mengjun Wu, Gentian Yue, Jifang Li, Jiagang Wu, Wang Weichao, Fengzhu Li, Mingsai Zhu, Haiwu Zheng, Ting Zheng, Yuzong Gu
Publikováno v:
Journal of Materials Chemistry A. 6:16439-16449
Lead-free piezoelectric materials have recently drawn extensive attention because of their high piezoelectric properties and for being harmless to the human body. We explored a high-output flexible lead-free piezoelectric nanogenerator (PENG) based o
Autor:
Fengzhu Li, Guang Yang, Ren-Kui Zheng, Gentian Yue, Yuzhe Liu, Wei Gao, H.W. Zheng, Mingsai Zhu, Kaixian Wang
Publikováno v:
Ceramics International. 43:16232-16237
In this paper, p -type Cu 2 O thin films have been epitaxially grown on n -type semiconducting (001) oriented Nb-SrTiO 3 (NSTO) substrates with different Nb doping concentration by pulsed laser deposition technique. X-ray diffraction and high resolut
Publikováno v:
Microelectronic Engineering. 247:111596
To enable mass production of InP-HEMTs operating in microwave and THz bands with T shaped gates as narrow as 30 nm, industry friendly processes for source/drain contacts are urgently needed. So far, although a self-aligned technique using pre-fabrica
Autor:
Guoliang Yuan, Gentian Yue, Z. S. Xie, Wei Zhang, Mingsai Zhu, Xiaohui Li, H.W. Zheng, Fengzhu Li, Xing-Tang Zhang
Publikováno v:
J. Mater. Chem. C. 5:10615-10623
Herein, the photovoltaic (PV) effect of ferroelectric Bi0.85La0.15FeO3 (BLFO) films fabricated through a sol–gel method is investigated. The ferroelectric properties of the BLFO films improve compared to the undoped BiFeO3 films. The application of
Autor:
Gentian Yue, Haiwu Zheng, Xiao Liang, Tianfeng Li, Fengzhu Li, Jianjun Tian, Yuhong Yu, Guosheng Yin, Mingsai Zhu, Xin’an Zhang
Publikováno v:
Electrochimica Acta. 215:543-549
In this work, the composites of Bi 4 Ti 3 O 12 /graphere (BTO/Gr) are used as counter electrode (CE) through facile method based on sol-gel and electrospinning techniques to improve the efficiency of dye-sensitized solar cells (DSSCs). The structure
Publikováno v:
Microelectronic Engineering. 226:111283
InP based InGaAs/InAlAs high electron mobility transistors (HEMTs) are advancing toward upper terahertz (THz) frequency beyond 500 GHz, driven by the constant shrinkage of the foot width in T-shaped gates. However, when the foot width is reduced to 3