Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Mingsai Zhu"'
Publikováno v:
Micro and Nano Engineering, Vol 13, Iss , Pp 100091- (2021)
High electron mobility transistors (HEMTs) are the basic building block in microwave monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz), millimeter (100–300 GHz) and tera [1] hertz (300 GHz–10 THz) wave.
Externí odkaz:
https://doaj.org/article/4a83720ba6964fa6be8c1ccca983dc5e
Autor:
Tao Liu, Xujie Tong, Shuoqiu Tian, Yuying Xie, Mingsai Zhu, Bo Feng, Xiaohang Pan, Rui Zheng, Shan Wu, Ding Zhao, Yifang Chen, Bingrui Lu, Min Qiu
Publikováno v:
Nanoscale. 14(25)
Due to the perfection of the nanofabrication in nanotechnology and nanoscience, ice lithography (IL) by patterning ice thin-films with a focused electron beam, as a significant derivative technology of electron beam lithography (EBL), is attracting g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bcb31712449d899793347c707abb294
https://pubmed.ncbi.nlm.nih.gov/35703448
https://pubmed.ncbi.nlm.nih.gov/35703448
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Background: Fast advancing of microwave/terahertz communication constantly demands ultrashort T-shaped gates by innovative nanofabrication techniques. The emerging RE650 resist provides a promising alternative to existing resists owing to its outstan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a50b9ee96bd4475afdd01fbc825aa8c
https://doi.org/10.1117/1.jmm.20.3.033202
https://doi.org/10.1117/1.jmm.20.3.033202
Publikováno v:
Microelectronic Engineering. 253:111675
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f412a424d0625ddbcff44502fb48a53
https://doi.org/10.1016/j.mee.2021.111675
https://doi.org/10.1016/j.mee.2021.111675
Autor:
Fengzhu Li, Guang Yang, Ren-Kui Zheng, Gentian Yue, Yuzhe Liu, Wei Gao, H.W. Zheng, Mingsai Zhu, Kaixian Wang
Publikováno v:
Ceramics International. 43:16232-16237
In this paper, p -type Cu 2 O thin films have been epitaxially grown on n -type semiconducting (001) oriented Nb-SrTiO 3 (NSTO) substrates with different Nb doping concentration by pulsed laser deposition technique. X-ray diffraction and high resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff2cec27a697af149aa3d3cfbbb2fc7
https://doi.org/10.1016/j.ceramint.2017.08.205
https://doi.org/10.1016/j.ceramint.2017.08.205
Publikováno v:
Microelectronic Engineering. 247:111596
To enable mass production of InP-HEMTs operating in microwave and THz bands with T shaped gates as narrow as 30 nm, industry friendly processes for source/drain contacts are urgently needed. So far, although a self-aligned technique using pre-fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a0ea4a8dc76ae5776983d5789f3540
https://doi.org/10.1016/j.mee.2021.111596
https://doi.org/10.1016/j.mee.2021.111596
Autor:
Guoliang Yuan, Gentian Yue, Z. S. Xie, Wei Zhang, Mingsai Zhu, Xiaohui Li, H.W. Zheng, Fengzhu Li, Xing-Tang Zhang
Publikováno v:
J. Mater. Chem. C. 5:10615-10623
Herein, the photovoltaic (PV) effect of ferroelectric Bi0.85La0.15FeO3 (BLFO) films fabricated through a sol–gel method is investigated. The ferroelectric properties of the BLFO films improve compared to the undoped BiFeO3 films. The application of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e7007f167ffecc3c3231df4250b8dd2
https://doi.org/10.1039/c7tc03371k
https://doi.org/10.1039/c7tc03371k
Autor:
Gentian Yue, Haiwu Zheng, Xiao Liang, Tianfeng Li, Fengzhu Li, Jianjun Tian, Yuhong Yu, Guosheng Yin, Mingsai Zhu, Xin’an Zhang
Publikováno v:
Electrochimica Acta. 215:543-549
In this work, the composites of Bi 4 Ti 3 O 12 /graphere (BTO/Gr) are used as counter electrode (CE) through facile method based on sol-gel and electrospinning techniques to improve the efficiency of dye-sensitized solar cells (DSSCs). The structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95d1d33f9bc6a0f80be1d2246057c9e
https://doi.org/10.1016/j.electacta.2016.08.086
https://doi.org/10.1016/j.electacta.2016.08.086
Publikováno v:
Microelectronic Engineering. 226:111283
InP based InGaAs/InAlAs high electron mobility transistors (HEMTs) are advancing toward upper terahertz (THz) frequency beyond 500 GHz, driven by the constant shrinkage of the foot width in T-shaped gates. However, when the foot width is reduced to 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74b352c8ad904d263ee57e4221ae400c
https://doi.org/10.1016/j.mee.2020.111283
https://doi.org/10.1016/j.mee.2020.111283
Autor:
Zhongxun Guo, Yifang Chen, Fuyou Liao, Mingsai Zhu, Jianan Deng, Lingyi Zong, Bing-Rui Lu, Wenzhong Bao, Yuying Xie, Jing Wan, Ru-Wen Peng, Jiahe Zhu
Publikováno v:
Advanced Optical Materials. 7:1901039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6ab9b9b4e87d329b5e074113ad28fe
https://doi.org/10.1002/adom.201901039
https://doi.org/10.1002/adom.201901039