Zobrazeno 1 - 10
of 348
pro vyhledávání: '"Mingo, N."'
Publikováno v:
Phys. Rev. B 83, 205208 (2011)
We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account. Th
Externí odkaz:
http://arxiv.org/abs/1810.10680
Publikováno v:
Appl. Phys. Lett. 99, 101903 (2011)
In stark contrast with three-dimensional (3D) nanostructures, we show that boundary scattering in two-dimensional (2D) nanoribbons alone does not lead to a finite phonon mean free path. If combined with an intrinsic scattering mechanism, 2D boundary
Externí odkaz:
http://arxiv.org/abs/1810.10681
Autor:
Carrete, J., Vermeersch, B., Thumfart, L., Kakodkar, R. R., Trevisi, G., Frigeri, P., Seravalli, L., Feser, J. P., Rastelli, A., Mingo, N.
We demonstrate an ab-initio predictive approach to computing the thermal conductivity ($\kappa$) of InAs/GaAs superlattices (SLs) of varying period, thickness, and composition. Our new experimental results illustrate how this method can yield good ag
Externí odkaz:
http://arxiv.org/abs/1710.03449
Autor:
Chen, Peixuan, Katcho, N. A., Feser, J. P., Li, Wu, Glaser, M., Schmidt, O. G., Cahill, David G., Mingo, N., Rastelli, A.
We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changin
Externí odkaz:
http://arxiv.org/abs/1301.0405
Publikováno v:
Phys. Rev. B 84, 125426 (2011)
We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact
Externí odkaz:
http://arxiv.org/abs/1108.6137
Autor:
Wang, Zhao, Mingo, N.
Publikováno v:
Appl. Phys. Lett. 97, 101903 (2010)
We theoretically compute the thermal conductivity of SiGe alloy nanowires as a function of nanowire diameter, alloy concentration, and temperature, obtaining a satisfactory quantitative agreement with experimental results. Our results account for the
Externí odkaz:
http://arxiv.org/abs/1104.1570
We theoretically compute the interface thermal resistance between crossing single walled carbon nanotubes of various chiralities, using an atomistic Green's function approach with semi-empirical potentials. The results are then used to model the ther
Externí odkaz:
http://arxiv.org/abs/0809.2660
An approach is presented for the atomistic study of phonon transport in real dielectric nanowires via Green functions. The formalism is applied to investigate the phonon flow through nanowires coated by an amorphous material. Examples for a simple mo
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310355
Autor:
Mingo, N.
Publikováno v:
Phys. Rev. B 68, 113308 (2003)
The lattice thermal conductivity of crystalline Si nanowires is calculated. The calculation uses complete phonon dispersions, and does not require any externally imposed frequency cutoffs. No adjustment to nanowire thermal conductivity measurements i
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308587
Publikováno v:
phys. stat. sol. (b) 226, No. 1, 79-85 (2001)
Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We compute ex
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110243