Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Minghai Dong"'
Publikováno v:
High Voltage, Vol 9, Iss 1, Pp 252-265 (2024)
Abstract The step‐up resonant converters are widely adopted to provide high voltage in kV‐level for electric propulsion system due to their high efficiency, low mass, modularisation, and high‐power density. The bipolar Cockcroft‐Walton voltag
Externí odkaz:
https://doaj.org/article/4b128ea1f14d4150b2ba92ebb83dc016
Publikováno v:
Energies, Vol 13, Iss 19, p 5173 (2020)
The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of effici
Externí odkaz:
https://doaj.org/article/8dd81dd666b3475b98ad538fbaae92dc
Publikováno v:
IEEE Transactions on Industrial Electronics. 69:11035-11045
A gallium nitride (GaN)-based resonant step-up converter is proposed for the application in the satellite electric propulsion (EP) system. This converter consists of a full-bridge inverter, a resonant tank and a multi-stage Cockcroft-Walton (CW) volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3246caf6e0bddb10cd7202a13b49ee24
https://doi.org/10.1109/tie.2021.3121711
https://doi.org/10.1109/tie.2021.3121711
Publikováno v:
IET Power Electronics. 15:1295-1321
Ultra-fast switching speed and low switching loss of the gallium nitride high electron mobility transistors enable the realisation of high power density converter with excellent conversion efficiency. However, the rapid switching transition leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90372f67bbb4d9da92bbe4361270c78b
https://doi.org/10.1049/pel2.12305
https://doi.org/10.1049/pel2.12305
Autor:
Huamin Jie, Si-Ping Gao, Zhenyu Zhao, Fei Fan, Zhenning Yang, Minghai Dong, Firman Sasongko, Amit K Gupta, Kye Yak See
Publikováno v:
2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435bf28fe4bd04c460a027cd3ea62655
https://doi.org/10.1109/spies55999.2022.10082373
https://doi.org/10.1109/spies55999.2022.10082373
Publikováno v:
2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf4fbbba7760608d8de1368e8d2de48
https://doi.org/10.1109/spies55999.2022.10082603
https://doi.org/10.1109/spies55999.2022.10082603
Publikováno v:
2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a4cfe81db668cc17c8ecd0f4e21cd81
https://doi.org/10.1109/apemc53576.2022.9888557
https://doi.org/10.1109/apemc53576.2022.9888557
Publikováno v:
2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442fdd851c55fb83327489e62b3939c9
https://doi.org/10.1109/apemc53576.2022.9888469
https://doi.org/10.1109/apemc53576.2022.9888469
Publikováno v:
IEEE Transactions on Power Electronics. 36:8253-8266
Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-density power converter applications. Due to the low switching loss, the GaN HEMT may lead to a new horizon in the applications, such as fast charger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6dbbe06d6d44a84c038352ce38373e
https://doi.org/10.1109/tpel.2020.3043801
https://doi.org/10.1109/tpel.2020.3043801
In-circuit impedance measurement provides useful information for many EMC applications. The inductive coupling approach is a promising in-circuit impedance measurement method due to its non-contact characteristics and simple on-site implementation. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3dc74a22af21d911b246f541946bc04
https://doi.org/10.36227/techrxiv.19461758.v1
https://doi.org/10.36227/techrxiv.19461758.v1
