Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ming-ren Yu"'
Autor:
Ming-Ren Yu, 游明仁
102
The purpose of this paper is to analysis the effects of the exchange rate change on the risk of Taiwan 50 index return. Firstly, to understand the characteristics of the data we need to establish a theoretical model as a reference for empiri
The purpose of this paper is to analysis the effects of the exchange rate change on the risk of Taiwan 50 index return. Firstly, to understand the characteristics of the data we need to establish a theoretical model as a reference for empiri
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/95571605069714700328
Publikováno v:
Physical Review B. 53:10771-10774
A thin SiGe buffer layer grown on a Ge-island-decorated Si(100) surface has been prepared and used as the substrate for growing the ${\mathrm{Si}}_{6}$${\mathrm{Ge}}_{4}$ short-period superlattice with symmetrically distributed built-in strains. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8d5e01d20791fe32f6bc7ae71d96b3
https://doi.org/10.1103/physrevb.53.10771
https://doi.org/10.1103/physrevb.53.10771
Publikováno v:
Physical Review B. 50:12230-12233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::608c94b2dafd62fb1aba7efd6ca68c89
https://doi.org/10.1103/physrevb.50.12230
https://doi.org/10.1103/physrevb.50.12230
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a0848ead0f8f8546f8c738cebb16a8
https://doi.org/10.7567/ssdm.1995.pd-l1-l5
https://doi.org/10.7567/ssdm.1995.pd-l1-l5
Raman scattering intensities of folded longitudinal acoustic phonons in GexSi1-x / Si superlattices.
Publikováno v:
Acta Physica Sinica; Sep1992, Vol. 1 Issue 2, p130-137, 8p
Publikováno v:
Physical Review B. 36:7660-7663
The Stranski-Krastanov growth mode of Ga on the InP(100) surface is reexamined by electron-energy-loss spectroscopy and other surface-sensitive techniques. The formation of GaP on top of the InP surface as the result of the Ga-In exchange reaction is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96e45c32a4ba03b5cb23b8e7bbd368c0
https://doi.org/10.1103/physrevb.36.7660
https://doi.org/10.1103/physrevb.36.7660
Publikováno v:
Semiconductor Science and Technology. 1:293-294
Both In-stabilised (4*2) and P-stabilised (1*4) surface reconstructions of InP(100) have been obtained by using ion sputtering followed with successive phosphorus deposition and annealing. Electron energy loss spectroscopy has been proved to be a sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7e568b5c3008ca38293369c7301ff87
https://doi.org/10.1088/0268-1242/1/5/001
https://doi.org/10.1088/0268-1242/1/5/001
Publikováno v:
Acta Physica Sinica; Apr1993, Vol. 2 Issue 4, p1-1, 1p
Publikováno v:
Chinese Physics Letters; Aug1985, Vol. 2 Issue 8, p1-1, 1p
Publikováno v:
Chinese Physics Letters; Jan1985, Vol. 2 Issue 1, p1-1, 1p