Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ming-Taou Lee"'
Autor:
Wen-Kuan Yeh, Bo-Wei Wu, Y. F. Hou, Chun-Hung Lin, Chun-Chi Chen, C. Yi. Lin, Kai-Shin Li, Cho-Lun Hsu, Tung-Yen Lai, Fu-Liang Yang, Ming-Taou Lee, Meiyi Li, Ivy Yang, C. S. Wu, Min-Cheng Chen, J. M. Lu, Y. J. Chen
Publikováno v:
ISCAS
By using sidewall electrode technology, both record small functional TiO 2 selection device (1 × 5 nm2) and HfO 2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switc
Autor:
Min-Cheng Chen, Fu-Liang Yang, Ming-Taou Lee, Kai-Shin Li, Y. F. Hou, Chun-Hung Lin, Cheng-San Wu, Tung-Yen Lai, Ming-Yang Li, Cho-Lun Hsu, ChiaHua Ho, Ivy Yang, Chun-Kuang Chen, Yi-Ju Chen, Bo-Wei Wu, J. M. Lu, C. Yi. Lin
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO 2 -based resistive random access memory (RRAM) device (100), and reaso
Autor:
Hsin-Hau Huang, Min-Cheng Chen, Yi-Ping Hsieh, ChiaHua Ho, Chun-Chi Chen, Cho-Lun Hsu, Meiyi Li, Wen-Cheng Chiu, Lu-Mei Lu, Fu-Liang Yang, Ming-Taou Lee, Kai-Shin Li, Tung-Yen Lai, Bo-Wei Wu, Cheng-San Wu
Publikováno v:
Advances in Multifunctional Materials and Systems II
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11417e2f3fe6257539b2698826c739c2
https://doi.org/10.1002/9781118771402.ch13
https://doi.org/10.1002/9781118771402.ch13
Autor:
Hsin-Hau Huang, Chenming Hu, ChiaHua Ho, Cheng-San Wu, Mei-Yi Lee, Kuang-Hao Chiang, Ivy Yang, Min-Cheng Chen, Tong-Huan Chou, Yong-Der Yao, Wen-Cheng Chiu, Tung-Yen Lai, Fu-Liang Yang, Ming-Taou Lee, Cho-Lun Hsu
Publikováno v:
2012 International Electron Devices Meeting.
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test a
Autor:
Kai-Shin Li, Ho, ChiaHua, Ming-Taou Lee, Min-Cheng Chen, Cho-Lun Hsu, Lu, J. M., Lin, C. H., Chen, C. C., Wu, B. W., Hou, Y. F., Lin, C. Yi., Chen, Y. J., Lai, T. Y., Li, M. Y., Yang, I., Wu, C. S., Fu-Liang Yang
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers; 2014, p1-2, 2p