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Autor:
Ming-Sung Wang, 王銘崧
99
Ultrafast time-resolved pump-probe (TRPP) apparatus has been applied to study the carrier dynamics of Si-doped InN thin films grown buffer by molecular beam expitaxy with and without a low-temperature growth GaN buffer layer. The peak of the
Ultrafast time-resolved pump-probe (TRPP) apparatus has been applied to study the carrier dynamics of Si-doped InN thin films grown buffer by molecular beam expitaxy with and without a low-temperature growth GaN buffer layer. The peak of the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/49678135850860841160
Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 4, p1-6, 6p, 1 Chart, 5 Graphs
Publikováno v:
Journal of Applied Physics. 115:044906
Temperature and excitation power dependent time-integrated photoluminescence of Si doped InN thin films are investigated. Photoluminescence (PL) spectra at low temperatures are described by single emission peak ensued due to “free-to-bound” recom