Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ming-Sung Tsai"'
Autor:
Ming-Sung Tsai, 蔡銘松
96
This study is aimed to measure patients’ organs radiation dose during the PCI procedure with TLD and Rando phantom. The result is intended to offer concrete suggestion and valuable information to help the cardiologists to aware the potentia
This study is aimed to measure patients’ organs radiation dose during the PCI procedure with TLD and Rando phantom. The result is intended to offer concrete suggestion and valuable information to help the cardiologists to aware the potentia
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mr2hyd
Autor:
Meng-En Lian, Guan-Yi Wu, Min-Fang Chao, Chong-Sheng Wang, Hsiao-Chien Miao, Ming-Sung Tsai, Mu-Yang Hsieh, Yeh-Peng Chen, Chun-Yuan Chu, Szu-Li Chang, Hui-Yu Tsai
Publikováno v:
SSRN Electronic Journal.
Autor:
Ming-Sung Tsai, Yen-Chieh Wen
Publikováno v:
Journal of Advances in Sports and Physical Education. 3:91-93
Autor:
Yan-Kuin Su, Hsin-Chieh Yu, W. C. Chen, Ming-Sung Tsai, Cheng Tien Wan, K.Y. Cheng, Seth Tsau, Chieh Hu, Ricky W. Chuang
Publikováno v:
Journal of Crystal Growth. 310:3615-3620
In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) rat
Publikováno v:
Glycoconjugate Journal. 24:591-604
Previous studies on the carbohydrate specificities of Erythrina cristagalli lectin (ECL) were mainly limited to analyzing the binding of oligo-antennary Galbeta1-->4GlcNAc (II). In this report, a wider range of recognition factors of ECL toward known
Publikováno v:
Journal of Crystal Growth. 298:145-149
In this report, the optical properties of the InGaAsN triple quantum wells were significantly improved by applying TMSb surfactant flow before the growth of InGaAsN layer. The PL intensities of the Sb-treated samples were improved by around two times
Publikováno v:
Journal of Materials Science. 36:3283-3289
Ultrafine aluminum nitride (AlN) powders were obtained by the chemical vapor deposition (CVD) process via the AlCl3-N2-NH3 system operated at various temperatures and different mixing modes of AlCl3 and NH3 gases. X-ray diffraction (XRD), Fourier tra
Publikováno v:
Journal of Crystal Growth. 210:487-495
Ultrafine aluminum nitride (AlN) powders were obtained by chemical vapor deposition via AlCl 3 –NH 3 –N 2 system operated at various temperatures and at a same 200 cm 3 /min flow rate of NH 3 and N 2 , respectively. It has been shown that when th
Publikováno v:
Journal of the Ceramic Society of Japan. 108:869-875