Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Ming-Shien Hu"'
Autor:
Kuei-Hsien Chen, Ying-Ying Horng, Wei-Hsun Yang, Je-Ruei Wen, Hsiang-Feng Yen, Li-Chyong Chen, Yian Tai, Abhijit Ganguly, Ming-Shien Hu
Publikováno v:
Carbon. 82:124-134
For graphene-based electrode materials, N doping is one of the leading approaches for enhancing the performance of supercapacitors. However, such an outstanding performance is suppressed by the agglomeration of graphene and unspecified N incorporatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c54b50d9da496d697c024de7a0b0038f
https://doi.org/10.1016/j.carbon.2014.10.042
https://doi.org/10.1016/j.carbon.2014.10.042
Autor:
Ming-Shien Hu1,2, Hsin-Li Chen3,4, Ching-Hsing Shen4, Lu-Sheng Hong1, Bohr-Ran Huang3, Kuei-Hsien Chen2,4, Li-Chyong Chen4 chenlc@ccms.ntu.edu.tw
Publikováno v:
Nature Materials. Feb2006, Vol. 5 Issue 2, p102-106. 5p. 4 Black and White Photographs, 1 Diagram, 4 Graphs.
Autor:
Kuei-Hsien Chen, Chun-Chiang Kuo, Ming-Shien Hu, Kian Ping Loh, Li-Chyong Chen, Chien Ting Wu, Priscilla Kailian Ang, Chun-Wei Chen
Publikováno v:
Carbon. 49:4911-4919
An on-chip growth technique aiming at large-scale production of few-layer epitaxial graphene nanowall (EGNW) arrays by microwave plasma enhanced chemical vapor deposition has been demonstrated. This hetero-architecture is formed by growing edge-orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4be7a06eaaa93fb872902e25cb961f7
https://doi.org/10.1016/j.carbon.2011.07.013
https://doi.org/10.1016/j.carbon.2011.07.013
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:576-579
Surface carbonization of Si(1 0 0) using C 2 H 2 as the carbon source was performed in a cold-wall-type chemical vapor deposition reactor at a low pressure of 5 Torr. The carbonization process as a function of C 2 H 2 partial pressure and treatment t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0d25895321eb0d90653973c4092e9d
https://doi.org/10.1016/j.jpcs.2007.07.041
https://doi.org/10.1016/j.jpcs.2007.07.041
Autor:
Tzung T. Chen, Kuei-Hsien Chen, Chun-Wei Chen, Chia Chun Chen, Ming Shien Hu, Lu-Sheng Hong, Li-Chyong Chen, Wei-Ming Wang, Yang-Fang Chen
Publikováno v:
Advanced Functional Materials. 16:537-541
Single-crystalline InN nanobelts have been synthesized using Au as the catalyst by a guided-stream thermal chemical vapor deposition technique. The resultant InN nanobelts typically have widths ranging from 20 to 200 nm, a width to thickness ratio of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994a17e11fcddb96f7e20f0395471f09
https://doi.org/10.1002/adfm.200500553
https://doi.org/10.1002/adfm.200500553
Autor:
Ming Shien Hu, Lu-Sheng Hong
Publikováno v:
Journal of Crystal Growth. 265:382-389
Surface carbonization of Si(1 1 1) using C 2 H 2 as the carbon source was performed at 1343 K and 5 Torr in a thermal chemical vapor deposition reactor. The evolution of the carbonization process as a function of the C 2 H 2 treatment time was invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25caae9bc850f4b0ba38a90eb6381669
https://doi.org/10.1016/j.jcrysgro.2004.02.022
https://doi.org/10.1016/j.jcrysgro.2004.02.022
Autor:
Hsieh Cheng Han, Li-Chyong Chen, Kuei-Hsien Chen, S. B. Wang, Ming Shien Hu, Ruei-San Chen, Shoou-Jinn Chang
Publikováno v:
Nanoscale. 6(3)
We report the optoelectronic device properties of individual Au–silica hybrid nanowires prepared by microwave plasma enhanced chemical vapor deposition. Due to the surface plasmon resonance (SPR) effect the photo-responsivity peak strongly depends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fa1fb3326f7a51a72160f9881ad99d6
https://pubmed.ncbi.nlm.nih.gov/24326397
https://pubmed.ncbi.nlm.nih.gov/24326397
Autor:
Szu-Ping Fu, Yang-Fang Chen, Kuei-Hsien Chen, Chih-Wei Hsu, Ming-Shien Hu, Li-Chyong Chen, Abhijit Ganguly
Publikováno v:
SPIE Proceedings.
Growth and luminescence properties of InN nanobelts (InNNBs) and InGaN nanowires (NWs) by MOCVD and thermal CVD will be presented, along with their relation and difference to thin film counterparts. While there is a growing acceptance of the low band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cc69c25db5c8d4a2f2ebedc6f8d88d
https://doi.org/10.1117/12.810438
https://doi.org/10.1117/12.810438
Autor:
Ming-Shien Hu, 胡銘顯
97
This paper examines the profitability of international momentum strategies. Using stock market index data from 21 developed and 18 emerging markets over the July 1992 to October 2008 period, we find the profitability of international momentum
This paper examines the profitability of international momentum strategies. Using stock market index data from 21 developed and 18 emerging markets over the July 1992 to October 2008 period, we find the profitability of international momentum
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/07706694954627670297
Autor:
Ming-shien Hu, 胡銘顯
94
The subject of this research is focused on: (1) investigating the surface carbonization of Si(111) and the subsequent heteroepitaxial growth of SiC(111) using SiH4 and C2H2 as gaseous reactants in a cold-wall type low pressure chemical vapor
The subject of this research is focused on: (1) investigating the surface carbonization of Si(111) and the subsequent heteroepitaxial growth of SiC(111) using SiH4 and C2H2 as gaseous reactants in a cold-wall type low pressure chemical vapor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/284rwe