Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Ming-Shiann Feng"'
Publikováno v:
Thin Solid Films. 478:293-298
In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (∼5.2×10 18 m −2 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc32c2891870b53c421417eeab7da656
https://doi.org/10.1016/j.tsf.2004.11.187
https://doi.org/10.1016/j.tsf.2004.11.187
Publikováno v:
Japanese Journal of Applied Physics. 42:4207-4212
The surface damaging effects of the inductively coupled plasma (ICP) etch and the photoenhanced chemical (PEC) wet etch on AlGaN, GaN and InGaN were systematically investigated. The surface morphologies and the etch rates after ICP etch and PEC wet e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35285687a3774605fd3a201736e7bea
https://doi.org/10.1143/jjap.42.4207
https://doi.org/10.1143/jjap.42.4207
Publikováno v:
Japanese Journal of Applied Physics. 41:7332-7337
Cu electropolishing has recently been introduced to replace Cu-chemical mechanical polishing (CMP). In this work, we found that when the space width is fixed, the planarization efficiency (PE) decreases with increasing line width. When line width is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91159550bf53b2204671d018e782316d
https://doi.org/10.1143/jjap.41.7332
https://doi.org/10.1143/jjap.41.7332
Publikováno v:
Japanese Journal of Applied Physics. 41:6347-6350
Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b534c3230959a47a4ba67a3d0f64edf2
https://doi.org/10.1143/jjap.41.6347
https://doi.org/10.1143/jjap.41.6347
Publikováno v:
Japanese Journal of Applied Physics. 41:5104-5107
Complete filling of 0.13-µm vias and deposition of Cu with a low resistivity of about 2.3 µΩcm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4add94c8ef46adcf50344f2d6e190691
https://doi.org/10.1143/jjap.41.5104
https://doi.org/10.1143/jjap.41.5104
Publikováno v:
Journal of Applied Physics. 87:2808-2815
The formation of nanosized Si crystals in dual-frequency plasma-enhanced chemical-vapor-deposited silicon oxides is identified in this study. As a higher SiH4N2O gas flow rate ratio is employed during the deposition process, the silicon-to-oxygen ato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66645c67da3b0bf0be2c4473d2506cdf
https://doi.org/10.1063/1.372260
https://doi.org/10.1063/1.372260
Publikováno v:
Journal of The Electrochemical Society. 146:1984-1990
As the trend toward shrinking design rules for ultralarge scale integrated circuits (ULSI) continues, the requirements of the planarization process become more and more stringent due to concerns over narrowing lithographic process latitudes in the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3d673e34b6519166437b7f54cd3680
https://doi.org/10.1149/1.1391877
https://doi.org/10.1149/1.1391877
Publikováno v:
Physical Review B. 56:6942-6946
Photoluminescence, resonant Raman scattering, and photoconductivity measurements have been employed to study the yellow emission in undoped $n$-type and a set of Se-doped GaN epitaxial films. It is best described by a transition from the conduction-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9d783731576fd398ed463bb6d6c7f1
https://doi.org/10.1103/physrevb.56.6942
https://doi.org/10.1103/physrevb.56.6942
Autor:
Gou-Chung Chi, Huang-Chung Cheng, J. D. Guo, Chia-Feng Lin, J. Minghuang Hong, Ming-Shiann Feng, Chin-Yuan Chen
Publikováno v:
Journal of Applied Physics. 82:2378-2382
High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 A/100 A) as a buffer layer produce a good quality GaN epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8cf154aa8fe7b922a26ba989216807d
https://doi.org/10.1063/1.366048
https://doi.org/10.1063/1.366048
Publikováno v:
Journal of The Electrochemical Society. 144:1100-1106
The chemical-mechanical polishing (CMP) process has been proven to be the most promising method for accomplishing global planarization. In this paper, results of chemical-mechanical polishing of fluorinated silicon dioxide (SiOF) thin films are prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0247978c8edac81f0c1d9b425c581b1d
https://doi.org/10.1149/1.1837539
https://doi.org/10.1149/1.1837539