Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Ming-Ren Lin"'
Autor:
Ming-ren Lin, 林明仁
95
There are two purposes in this research, one is to develop the new method which can be used for detection and quantification of chloramphenicol in fish, and the method is according to Commission Decision 2002/657/EC. The other is to study abo
There are two purposes in this research, one is to develop the new method which can be used for detection and quantification of chloramphenicol in fish, and the method is according to Commission Decision 2002/657/EC. The other is to study abo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/5n966y
Autor:
Chih-Yuan Chang, Jia-Lin Wang, Yen-Chen Chen, Xiang-Xu Pan, Wei-Nai Chen, Ming-Ren Lin, Yu-Jui Ho, Ming-Tung Chuang, Wen-Tzu Liu, Chih-Chung Chang
Publikováno v:
Chemosphere. 297
East Asian continental outflows containing with pollutants may deteriorate air quality in the downwind region via long-range transport (LRT). In particular, cold fronts with high wind speeds generally promote the LRT of air pollutants to further down
Autor:
Yen Chen Chen, Jia Lin Wang, Chih-Chung Chang, Chih Yuan Chang, Hsiang Hsu Pan, Ming Ren Lin, Chang Feng Ou-Yang
Publikováno v:
Atmospheric Environment. 184:254-261
We exploited a novel sampling vehicle, a multi-rotor drone carrying a remote-controlled whole air sampling device, to collect aerial samples with high sample integrity and preservation conditions. An array of 106 volatile organic compounds (VOCs), CO
Publikováno v:
Chemosphere. 144:484-492
To advance the capabilities of probing chemical composition aloft, we designed a lightweight remote-controlled whole air sampling component (WASC) and integrated it into a multicopter drone with agile maneuverability to perform aerial whole air sampl
Publikováno v:
ECS Transactions. 2:329-339
Planar single-gate transistors have been recently demonstrated with reasonable performance at sub-20 nm of physical gate length. However, a need for high performance transistors with channels shorter than that, as expressed by 2005 ITRS goals, requir
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:5-12
Ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) devices show great performance due to undoped channels and excellent electrostatic control. Very high drive currents and good off-state leakage, ideal subthreshold slope, and small drai
Autor:
Christy Mei-Chu Woo, Paul L. King, Minh Van Ngo, James N. Pan, Ming-Ren Lin, Paul R. Besser, J. Bernard, Bryan Tracy, Qi Xiang, Chih-Yuh Yang, Ercan Adem, J. Pellerin
Publikováno v:
IEEE Transactions on Electron Devices. 50:2456-2460
This letter reports the first replacement (Damascene) metal gate pMOSFETs fabricated with Ni/TaN, Co/TaN stacked electrode, where Ni or Co is in direct contact with the gate SiO/sub 2/, to adjust the electrode metal work function and TaN is used as t
Autor:
An Chen, Ming-Ren Lin
Publikováno v:
IEEE Electron Device Letters. 32:590-592
The reset switching probability of resistive switching devices is characterized in array testing. The measured switching probability can be quantitatively explained based on the mechanism of a thermally activated reset process. An analytical model of
Publikováno v:
Microelectronics Reliability. 40:1987-1995
Ultrathin gate oxide is essential for low supply voltage and high drive current for ULSI devices. The continuous scaling of oxide thickness has been a challenge on reliability characterization with conventional time-dependent dielectric breakdown (TD
Publikováno v:
IEEE Electron Device Letters. 28:691-693
This letter reports a selective metal deposition process using an electrodeless technique for MOSFETs fabricated in an ultrathin silicon-on-insulator (UTSOI) substrate. A layer of metal (CoWP or CoB) is formed on the source and drain nickel and cobal