Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ming-Kwang Lee"'
Publikováno v:
1982 International Electron Devices Meeting; 1982, p781-784, 4p
Publikováno v:
IEEE Transactions on Electron Devices; 1987, Vol. 34 Issue 7, p1540-1552, 13p
Publikováno v:
Journal of The Electrochemical Society. 130:2249-2252
Belt transport CVD processing, a simple but useful technique applied widely in wafer fabrication, is evaluated in this work. An empirical relation, (Tox) (belt speed)" = K, where Tox is the oxide thickness, is established. The value ofn is found to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cc349c0606d3f16ad9be329c3bea43
https://doi.org/10.1149/1.2119561
https://doi.org/10.1149/1.2119561
Publikováno v:
Solid-State Electronics. 27:995-1001
The n - p neutralization reaction between phosphorus and boron incorporated in polysilicon films was investigated. A process for fabricating semi-insulating polysilicon resistors has been developed. It has been found that the I-V characteristics seem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a13b02590e1ef169c219661071e26660
https://doi.org/10.1016/0038-1101(84)90073-x
https://doi.org/10.1016/0038-1101(84)90073-x
Publikováno v:
Journal of The Electrochemical Society. 130:458-462
The oxidation resistance characteristics of silicon thermal nitride films are studied theoretically and experimentally. A four-layer model for the oxidation resistance kinetics has been developed in general, and the oxidation resistance time has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b507247374e3172bf17d402544fbaa
https://doi.org/10.1149/1.2119731
https://doi.org/10.1149/1.2119731
Publikováno v:
Journal of The Electrochemical Society. 129:1559-1563
An analytic model for the growth kinetics of silicon thermal nitridation has been developed, in which the nitrogen radicals diffused across the as-grown thermal silicon nitride layer have been characterized by a characteristic diffusion length. It ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2334da4c334a210a08e1948c75c3727f
https://doi.org/10.1149/1.2124207
https://doi.org/10.1149/1.2124207
Publikováno v:
Journal of The Electrochemical Society. 131:875-877
A significant influence of thermal nitridation on the electrical characteristics of nitroxide films was found in this study. Nitridation at temperatures lower than 1000~ results in a great negative shift of flatband voltage VFB. However, the value of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcec1623ae34ee60d687af2b898b5f06
https://doi.org/10.1149/1.2115718
https://doi.org/10.1149/1.2115718
Publikováno v:
1982 International Electron Devices Meeting.
The non-linear I-V characteristics of polysilicon resistors at high electric fields have been extensively studied. The I-V measurements over a temperature range from -194° to 144°C were made on resistors fabricated in polysilicon films deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4540f1db3f826f92f6be5ac95a96d4
https://doi.org/10.1109/iedm.1982.190412
https://doi.org/10.1109/iedm.1982.190412
Autor:
akusoko Y, Ming-Kwang Lee
Publikováno v:
Microelectronics Reliability. 25:604-605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d13c67b8ddfec454cd5ecdc1165fd6
https://doi.org/10.1016/0026-2714(85)90381-6
https://doi.org/10.1016/0026-2714(85)90381-6
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