Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Ming-Hung Han"'
Autor:
Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 168-173 (2019)
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient
Externí odkaz:
https://doaj.org/article/3a16f88ca06c45609218901b2951549b
Autor:
Jia-Jiun Wu, Ming-Hung Han, Shih-Han Lin, Hung-Bin Chen, Mu-Shih Yeh, Yung-Chun Wu, Lun-Chun Chen, Yu-Shuo Chang, Yu-Ru Lin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 168-173 (2019)
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1a8f39b07124635a644e25c6db6634
https://doi.org/10.1109/jeds.2018.2886446
https://doi.org/10.1109/jeds.2018.2886446
Autor:
Binh Tinh Tran, Ming Hung Han, Kung Liang Lin, Hung Wei Yu, Chun-Yen Chang, Chen Chen Chung, Yen Teng Ho, Edward Yi Chang
Publikováno v:
Electronic Materials Letters. 10:963-967
In this study, we investigate the effect of the shading factor of the front grid pattern on concentrated solar cell efficiency, taking the trade-off between the series resistance of the electrodes and the amount of incident light into consideration.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068fbb1ff375aa51d7d79b34ff7d7b85
https://doi.org/10.1007/s13391-014-3201-z
https://doi.org/10.1007/s13391-014-3201-z
Publikováno v:
IEEE Transactions on Electron Devices. 60:1807-1813
The design and characteristics of junctionless (JL) bulk FinFET devices and circuits are compared with the conventional inversion-mode (IM) bulk FinFET using 3-D quantum transport device simulation. The JL bulk FinFET shows better short channel chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef1951bb49462199db6d1ba40bd8e74c
https://doi.org/10.1109/ted.2013.2256137
https://doi.org/10.1109/ted.2013.2256137
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:248-252
A reduced surface field (RESURF) laterally diffused metal oxide semiconductor (LDMOS) device with the concept of charge compensation using p-implant layer (PIL) without additional process step is proposed in standard 0.18-μm technology. By simply us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1429de0e10bcf8cdbb4b62e3288fbf3d
https://doi.org/10.1109/tsm.2013.2258359
https://doi.org/10.1109/tsm.2013.2258359
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:509-516
In this paper, we examine the impact of random-dopant-fluctuation (RDF), process-variation-effect (PVE), and workfunction-fluctuation (WKF), on 16-nm-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c0eba1e90ea6abe75e5262212b16da
https://doi.org/10.1109/tsm.2010.2056710
https://doi.org/10.1109/tsm.2010.2056710
Publikováno v:
Microelectronics Reliability. 50:635-638
High-κ/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively estimates the influences of the intrinsic parameter fluctuations on nanoscale fin-type field-effect-transistors and cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c051f5e5848b960c223cbc333f2a00dc
https://doi.org/10.1016/j.microrel.2010.01.041
https://doi.org/10.1016/j.microrel.2010.01.041
Publikováno v:
IEEE Transactions on Electron Devices. 57:437-447
This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c9bd6bb5f84889ef853cd14f86c09c2
https://doi.org/10.1109/ted.2009.2036309
https://doi.org/10.1109/ted.2009.2036309
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
For the first time, the concept of source side potential energy engineering to enhance the average velocity of carriers at the beginning of the channel, known as injection velocity, while keeping the same electrostatics was proposed and realized by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d1f44c3af52ae5435298a0dd47c0c30
https://doi.org/10.1109/vlsi-tsa.2015.7117570
https://doi.org/10.1109/vlsi-tsa.2015.7117570
Autor:
Chun-Yen Chang, Yung-Chun Wu, Ming-Hung Han, Ya-Chi Cheng, Jia-Jiun Wu, Nan-Heng Lu, Hung-Bin Chen
Publikováno v:
IEEE Electron Device Letters. 34:897-899
This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 108 because of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b1bc3d1dcf971397c231a676893d49
https://doi.org/10.1109/led.2013.2262018
https://doi.org/10.1109/led.2013.2262018