Zobrazeno 1 - 10
of 488
pro vyhledávání: '"Ming-Fu Li"'
Autor:
Ming Fu Li
This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, includi
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract Paris is famous in China for its medicinal value and has been included in the Chinese Pharmacopoeia. Inaccurate identification of these species could confound their effective exploration, conservation, and domestication. Due to the plasticit
Externí odkaz:
https://doaj.org/article/16f74d201f2340b39296b2a64a520529
Autor:
Ming Fu Li
Publikováno v:
Biomedical Journal of Scientific & Technical Research. 40
Publikováno v:
Solid-State Electronics. 137:95-101
An analytical model is developed for the fluctuation of the electrostatic potential induced by a charged trap in the gate oxide in tunneling field effect transistor (TFET). The model is applied to get the fluctuation of the drain current induced by a
Publikováno v:
Journal of Fuel Chemistry and Technology. 45:1349-1355
Al-ITQ-13 zeolites with different SiO2/Al2O3 molar ratios were synthesized by using seeds in the gel and characterized by XRD, SEM, N2 physisorption, MAS NMR and NH3-TPD. The effect of SiO2/Al2O3 molar ratio on the catalytic performance of Al-ITQ-13
Autor:
Hui Shen, Hui-Wen Yuan, Shao-Feng Ding, Albert Chin, Pengfei Wang, Daming Huang, Ming-Fu Li, Jun-Jie Li, Yifang Chen, Jinhai Shao
Publikováno v:
IEEE Electron Device Letters. 38:677-680
For the first time, we report the positive bias temperature instability of the back gated multilayer MoS2 n-MOSFETs with Al2O3 gate dielectric. In the stress phase, the ${I}_{d}$ – ${V}_{g}$ curve shifts to the positive gate bias. In the recovery p
Publikováno v:
Advanced Materials Research. 1063:318-321
In response to the increasingly stringent environmental requirements and collision regulations, the high strength steel has become the mainstream trend of the automotive materials. This study used door impact beam as the experimental vehicle, applied
Autor:
Pengfei Wang, Jinhai Shao, Daming Huang, Shi-Jin Ding, Yifang Chen, Wen-Jun Liu, Jun-Jie Li, Hui Shen, Ming-Fu Li, Albert Chin, Hui-Wen Yuan
Publikováno v:
IEEE Electron Device Letters. 37:516-518
A new method is proposed to distinguish the contributions of the low-frequency noise (LFN) from the channel and the source/drain Schottky contacts in MOS devices. The method is applied to back-gated nMOSFETs with MoS2 channel and Al2O3 gate dielectri
Autor:
Yinyin Lin, Tran Xuan Anh, Daming Huang, Dongyi Lu, Yadong Zhao, Shi-Jin Ding, Yu Hong Yu, Ming-Fu Li, Pengfei Wang
Publikováno v:
IEEE Transactions on Electron Devices. 61:2294-2301
The area, temperature (160–300 K), and bias polarity dependences of the I – V curves of the self-rectifying n+Si-HfO2–Ni resistance random access memory (RRAM) have been measured systematically. The complementary nonrectifying p+Si-HfO2–Ni RR
Publikováno v:
IEEE Transactions on Nanotechnology. 12:806-809
A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted ele