Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ming-Fong Hsieh"'
Autor:
Ming-fong Hsieh, 謝明峰
99
With the fast-changing pace of technological environment, website design approach consists in many aspects including education, industry and policy, combining new concept and industry trend to instill in pupils’ thoughts. The main purpose o
With the fast-changing pace of technological environment, website design approach consists in many aspects including education, industry and policy, combining new concept and industry trend to instill in pupils’ thoughts. The main purpose o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54358532199653006426
Autor:
Ming-fong Hsieh, 謝閔豐
98
M-plane (101 ¯0) ZnO thin films were grown on m-plane sapphire (101 ¯0) substrates by RF magnetron sputtering. We varied the RF power, working pressure, and O2/Ar ratio to obtain the best growth conditions. Structural properties were invest
M-plane (101 ¯0) ZnO thin films were grown on m-plane sapphire (101 ¯0) substrates by RF magnetron sputtering. We varied the RF power, working pressure, and O2/Ar ratio to obtain the best growth conditions. Structural properties were invest
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/21356026041819806990
Autor:
Ming-Fong Hsieh, 謝明峰
97
This study chooses the hydrogen direct injection on the performance of the hydrogen engine to explore. The experiment engine adopts single cylinder and four strokes which converts gasoline fuel into hydrogen fuel. Moreover, modified on the e
This study chooses the hydrogen direct injection on the performance of the hydrogen engine to explore. The experiment engine adopts single cylinder and four strokes which converts gasoline fuel into hydrogen fuel. Moreover, modified on the e
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61958709169998335777
Autor:
Ming-Fong Hsieh, 謝明峰
94
In this study, we use bismuth (Bi) as a solvent to grow GaAs homoepilayer by liquid phase epitaxy (LPE). In addition to investigating the optimum condition for homoepitaxy from Bi solution, we also try to grow GaAs quantum structures using a
In this study, we use bismuth (Bi) as a solvent to grow GaAs homoepilayer by liquid phase epitaxy (LPE). In addition to investigating the optimum condition for homoepitaxy from Bi solution, we also try to grow GaAs quantum structures using a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40262475533565536624
Autor:
Ming-Fong, Hsieh.
Thesis (M.A.)--Graduate Institute of Electronic Engineering.
Includes bibliographical references.
Includes bibliographical references.