Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ming-Feng Shieh"'
Autor:
Ming-Feng Shieh, 謝明峰
88
Improper design of a diffuser will affect the air distribution in a room, and will cause uncomfort. The effects could more severe when cold air is used. Experimental measurement of the flow field cause by a diffuser is constrained due to low
Improper design of a diffuser will affect the air distribution in a room, and will cause uncomfort. The effects could more severe when cold air is used. Experimental measurement of the flow field cause by a diffuser is constrained due to low
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/02210465013022121092
Autor:
Ming-Feng Shieh, 謝銘峰
95
The purpose of this study is to explore the current development status of school-based curriculum with Still Thoughts Instruction in Tzu Chi Junior High School affiliated with Tzu Chi University, and the predicaments which the school is confr
The purpose of this study is to explore the current development status of school-based curriculum with Still Thoughts Instruction in Tzu Chi Junior High School affiliated with Tzu Chi University, and the predicaments which the school is confr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77273561660255944965
Autor:
Chia-Cheng Ho, Liang-Gi Yao, Tsu-Hsiu Perng, Chia-Pin Lin, Chu-Yun Fu, Chia-Feng Hu, Chih-Hao Chang, Chia-Cheng Chen, Ta-Ming Kuan, Hun-Jan Tao, Ting-Chu Ko, Shyue-Shyh Lin, Shih-Ting Hung, Neng-Kuo Chen, Chen Tzu-Chiang, Ching-Yu Chan, Hong-Nien Lin, Ming-Feng Shieh, Hsien-Chin Lin, Clement Hsingjen Wann, Tsung-Lin Lee, Shu-Ting Yang, M. Cao, Chih-Chieh Yeh, H. C. Lin, Jeff J. Xu, Shih-Cheng Chen, Chih-Sheng Chang, Li-Shyue Lai, Jyh-Cheng Sheu, Wei-Hsiung Tseng, Feng Yuan, C.H. Chang
Publikováno v:
2010 International Electron Devices Meeting.
We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e100479e1546404055154726f5e6d8
https://doi.org/10.1109/iedm.2010.5703473
https://doi.org/10.1109/iedm.2010.5703473
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144d7411e1ccabb3bfe552132a866a0f
https://doi.org/10.1109/iedm.2009.5424367
https://doi.org/10.1109/iedm.2009.5424367
Autor:
Benjamin Lin, Jonathan Ho, Wolfgang Leitermann, Jason Lin, Linyong Pang, Orson Lin, Jie-wei Sun, Xin Wu, Yan Wang, Yong Liu, Ming Feng Shieh
Publikováno v:
SPIE Proceedings.
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We discuss some specifics of ILT at chip-scale. We show simulation and experimental results from 90nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b656e51348e9505d7602e7cc040d347d
https://doi.org/10.1117/12.656827
https://doi.org/10.1117/12.656827
Autor:
Benjamin Lin, Manoj Chacko, Yunqiang Zhang, Erick Liu, Xin Wu, Jonathan Ho, Chun-Chi Yu, Petrisor Panaite, Ming-Feng Shieh, Wen-Kang Lei
Publikováno v:
SPIE Proceedings.
In the post-physical verification space called 'Mask Synthesis' a key component of design-for-manufacturing (DFM), double-exposure based, dark-field, alternating PSM (Alt-PSM) is being increasingly applied at the 90nm node in addition with other matu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8a33ca650e1826458bb701fd530705
https://doi.org/10.1117/12.637426
https://doi.org/10.1117/12.637426
Autor:
Yan Wang, Orson Lin, Jonathan Ho, Xin Wu, Jie-wei Sun, Wolfgang Leitermann, Linyong Pang, Ming Feng Shieh, Yong Liu, Jason Lin, Benjamin Lin
Publikováno v:
SPIE Proceedings.
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5bed913fb3746c4b71cee321cabb7c9
https://doi.org/10.1117/12.632211
https://doi.org/10.1117/12.632211
Autor:
Erick Liu, Chun-Chi Yu, Benjamin Lin, Xin Wu, Xiaoyang Li, Manoj Chacko, Ming-Feng Shieh, Jonathan Ho, Wen-Kang Lei, Henry Lin
Publikováno v:
Design and Process Integration for Microelectronic Manufacturing III.
At the sub 90nm nodes, resolution enhancement techniques (RETs) such as optical proximity correction (OPC), phase-shifting masks (PSM), sub-resolution assist features (SRAF) have become essential steps in the post-physical verification 'Mask Synthesi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35314062b35be5afed3a18f80cf8409d
https://doi.org/10.1117/12.598838
https://doi.org/10.1117/12.598838
Autor:
Yun-Hsing Fan, Andy Ying-Guey Fuh, Chi-Yen Huang, Ming-Feng Shieh, Tsung-Chih Ko, I-Min Jiang, M. S. Tsai
Publikováno v:
Japanese Journal of Applied Physics. 40:2255
We have performed diffraction experiments on polymer-stabilized cholesteric texture (PSCT) films made from E48-BAB6 mixtures cured at various UV intensities. The diffraction observed in these samples is the Qu'etelet-type ring pattern, which is gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d21ef0d291a88ada9243c5ea8e06bd
https://doi.org/10.1143/jjap.40.2255
https://doi.org/10.1143/jjap.40.2255