Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ming-Chang Yu"'
Autor:
Chung-I. Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan-Fu Chen, Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 t
Externí odkaz:
https://doaj.org/article/d2f113e1ff8d46f38ccfc5144977f326
Autor:
Ming-Chang Yu, 余明正
103
In recent years, people have been brought to tourist old streets due to great popularity gained among people in Taiwan. Thus the difficulty of fire rescue operations on old streets is escalating. Jiufen Old Street is located on hillsides whe
In recent years, people have been brought to tourist old streets due to great popularity gained among people in Taiwan. Thus the difficulty of fire rescue operations on old streets is escalating. Jiufen Old Street is located on hillsides whe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/g577mx
Autor:
Ming-Chang Yu, 余明璋
97
Due to the rapid development of the Internet that makes people unconstrained in time and space. The virtual communities, making people who are in different areas can share their knowledge and build the relationship with others through the Int
Due to the rapid development of the Internet that makes people unconstrained in time and space. The virtual communities, making people who are in different areas can share their knowledge and build the relationship with others through the Int
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53351130577818156617
Autor:
Jian-Jie Chen, Yao-Chih Chuang, Shengdong Zhang, Wan-Ching Su, Ting-Chang Chang, Shin-Ping Huang, Hong-Chih Chen, Yu-Ching Tsao, Kuan-Ju Zhou, Chuan-Wei Kuo, Guan-Fu Chen, Ming-Chang Yu, Sung-Chun Lin
Publikováno v:
IEEE Electron Device Letters. 40:1752-1755
This study investigates short channel (length $ ) p-type organic thin-film transistor (OTFT) devices which exhibit off-state leakage in their ID–VG characteristics. This phenomenon is attributed to the fact that when a lower positive gate voltage i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7148c1e328057b6b01f9f01e03c70792
https://doi.org/10.1109/led.2019.2942965
https://doi.org/10.1109/led.2019.2942965
Autor:
Shengdong Zhang, Ting-Chang Chang, Hong-Chih Chen, Guan-Fu Chen, Sung-Chun Lin, Chia-Sen Chang, Shin-Ping Huang, Wei-Chih Lai, Jian-Jie Chen, Cheng-Ming Tsai, Ming-Chang Yu, Ann-Kuo Chu, Chuan-Wei Kuo, Cheng-Yen Yeh, Hua-Mao Chen, Po-Yung Liao
Publikováno v:
IEEE Transactions on Electron Devices. 66:2614-2619
This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current–gate voltage ( ${I}_{\text {D}}$ – ${V}_{\text {
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbf7347ab3a111e18a6aedf7a506171
https://doi.org/10.1109/ted.2019.2908859
https://doi.org/10.1109/ted.2019.2908859
Autor:
Li-Hui Chen, Cheng-Ming Tsai, Guan-Fu Chen, Po-Yung Liao, Sung-Chun Lin, Chung-I Yang, Shengdong Zhang, Ming-Chang Yu, Cheng-Yen Yeh, Ting-Chang Chang, Bo-Wei Chen, Wu-Ching Chou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 685-690 (2018)
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The $V_{\mathrm{ th}}$ is found to shift negatively when increasing the $I _{D}$ – $V _{G}$ meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5a393d58d0d1303bc36610a93aa08bb
https://ieeexplore.ieee.org/document/8360776/
https://ieeexplore.ieee.org/document/8360776/
Autor:
Cheng Ming Tsai, Ting-Chang Chang, Wu-Ching Chou, Bo Wei Chen, Sung Chun Lin, Chia Sen Chang, Chung I. Yang, Cheng Yen Yeh, Po Yung Liao, Ming Chang Yu
Publikováno v:
Thin Solid Films. 644:45-51
This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3adb81679dadd5b27fdcb096f9119f
https://doi.org/10.1016/j.tsf.2017.08.053
https://doi.org/10.1016/j.tsf.2017.08.053
Publikováno v:
Japanese Journal of Applied Physics. 42:4928-4934
This study emphasizes the important role of film stress in aluminum-induced crystallization (AIC) of sputtered amorphous silicon (a-Si). a-Si/Al/glass stacking structures with various a-Si/Al thickness ratios were prepared to provide different film s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a1a3afddbcb4742398e0cb5fa526017
https://doi.org/10.1143/jjap.42.4928
https://doi.org/10.1143/jjap.42.4928
Autor:
Ching-Ming Hsu1 tedhsu@mail.stut.edu.tw, Ming-Chang Yu1
Publikováno v:
Journal of Materials Science Letters. Aug2003, Vol. 22 Issue 15, p1079-1081. 3p.
Autor:
Ming-Chang Yu, Ching-Ming Hsu
Publikováno v:
Journal of Materials Science Letters. 22:1079-1081
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba0442e350c580752a442f56edf2099
https://doi.org/10.1023/a:1024982723808
https://doi.org/10.1023/a:1024982723808