Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Ming Tsung Hung"'
Autor:
Ming Tsung Hung, 洪銘聰
100
The characters of the digital evidence are easily modified, duplicated, be hard to directly perceive, be hard to feel the authenticity of digital evidence and be difficult to collect and preserve, so the digital evidence easily lost their in
The characters of the digital evidence are easily modified, duplicated, be hard to directly perceive, be hard to feel the authenticity of digital evidence and be difficult to collect and preserve, so the digital evidence easily lost their in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/49129785248263456663
Autor:
Ming-Tsung Hung, Jui-Han Lu
Publikováno v:
Frequenz. 72:365-371
A MIMO dipole antenna with triple band operation for 4 G LTE femtocell is proposed. This designed dipole antenna with a regulated RL ≥ 10 dB can achieve 128/1007 MHz (18.3/39.2 %) for the LTE 700/2300/2500 MHz operating bands respectively. The meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aafb6afd4e4d5a1aed8dfe6031dd8398
https://doi.org/10.1515/freq-2017-0076
https://doi.org/10.1515/freq-2017-0076
Publikováno v:
Vacuum. 118:125-132
Amorphous tungsten oxide film under different oxygen flow rates were deposited by direct current sputtering. The deposition process was monitored by the Langmuir probe and optical emission spectrometer. From the voltage change at target and all plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a67711ff8b544a5ecd2e5f8171525377
https://doi.org/10.1016/j.vacuum.2015.01.020
https://doi.org/10.1016/j.vacuum.2015.01.020
Publikováno v:
Thin Solid Films. 587:75-82
Tungsten oxide films under different oxygen flow rates are deposited by DC sputtering. The voltage change at target and analyses for the deposited films by X-ray diffraction, scanning electronic microscope, X-ray photoelectron spectroscopy and ultrav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da0cbc289a322451b2876530d288c32
https://doi.org/10.1016/j.tsf.2014.12.022
https://doi.org/10.1016/j.tsf.2014.12.022
Publikováno v:
Advanced Materials Research. 893:679-682
Thermolithography uses heat as the exposure source which has the possibility to generate patterns with minimum feature size exceeding the diffraction limit in photolithography. In addition, heat transport is much slower than light which allows us to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b350905c9117baf3f2e3451f1635f0b
https://doi.org/10.4028/www.scientific.net/amr.893.679
https://doi.org/10.4028/www.scientific.net/amr.893.679
Autor:
Wei-Ting Lai, Hung-Tai Chang, C. C. Wang, I. H. Chen, Jung-Chao Hsu, Pei-Wen Li, Ming-Tsung Hung, K. H. Chen, Wen-Yen Chen, Tzu-Min Hsu, Shen-Wei Lee
Publikováno v:
IEEE Transactions on Nanotechnology. 11:657-660
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d18d85c0d7b74cac20591935a6006844
https://doi.org/10.1109/tnano.2012.2202124
https://doi.org/10.1109/tnano.2012.2202124
Autor:
Li-Wei Tu, Tsung Yen Tsai, Ming Tsung Hung, Wei-Yang Chiang, Ray-Hua Horng, Jen-Hung Tu, Dong Sing Wuu, Shih-Cheng Huang
Publikováno v:
IEEE Transactions on Electron Devices. 58:3962-3969
A selectively etched (SE) GaN template for high-power 410-nm InGaN-based LEDs was fabricated, where 2- μm-thick undoped GaN was grown on recess patterned sapphire substrates (PSSs). This was followed by H3PO4 selective etching, 0.5-μm-thick SiO2 fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7315283cc78da0b1711d61c083a078
https://doi.org/10.1109/ted.2011.2164077
https://doi.org/10.1109/ted.2011.2164077
Autor:
Ming-Tsung Hung, Y. Sungtaek Ju
Publikováno v:
Sensors and Actuators A: Physical. 148:111-114
We study thermal patterning of micro- and nanoscale thin films of low-surface energy amorphous fluoropolymers, which circumvents some of the limitations of conventional photolithography techniques. Controlled heating of a spin-coated Teflon AF® laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ee65ef84eb05129ceda5853623deae9
https://doi.org/10.1016/j.sna.2008.06.020
https://doi.org/10.1016/j.sna.2008.06.020
Autor:
Hung Tai Chang, J. C. Hsu, Ming-Tsung Hung, C. C. Wang, J. Y. Chiou, Sheng Wei Lee, Pei-Wen Li
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9b3efd86f070241e4fbcd2a52eec54
https://doi.org/10.7567/ssdm.2012.ps-9-8
https://doi.org/10.7567/ssdm.2012.ps-9-8
Publikováno v:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV.
Chemical lift-off (CLO) technique has been paid more attention since no damages will be induced to GaN epi-layer during the epilayer lift-off process. In this study two novel CLO approaches were used to separate GaN epilayer from sapphire substrate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc05a99c8b668c8fe3db45299ada011
https://doi.org/10.1117/12.872570
https://doi.org/10.1117/12.872570