Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Ming Ling Lee"'
Autor:
Ming-Ling Lee, Shih-Ming Chen, Jia-Jie Jhang, Lin-Sin Lu, Shu-Ting Yang, Pin-En Chiu, Yu-Sheng Tsai, Yewchung Sermon Wu, Chin-Chi Cheng, Hsiang Chen, Jung Han
Publikováno v:
IEEE Access, Vol 10, Pp 32453-32460 (2022)
PbZrxTi1-xO3 (PZT) ultrasonic sensing chips were fabricated by ball milling, electrical discharge and spraying on iron sheets. Various PZT growth conditions, including the thickness of the iron sheet and the coating layers, were investigated. Ultraso
Externí odkaz:
https://doaj.org/article/effc634f38034479a54675c8b59673d5
Autor:
Chyuan-Haur Kao, Kuan-Lin Chen, Hui-Ru Wu, Yu-Chin Cheng, Cheng-Shan Chen, Shih-Ming Chen, Ming-Ling Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 12, Iss 8, p 734 (2022)
In this study, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3/SiO2 double stacked sensing membranes were fabricated with pH sensing capability. The results indicate that Sb2O3/SiO2 double stacked membranes with appropriate annealing
Externí odkaz:
https://doaj.org/article/9c96dcf20afe468daac4ec36d2a90245
Autor:
Chyuan-Haur Kao, Yu-Ching Liao, Chi-Chih Chuang, Yi-Hsuan Huang, Chang-Hsueh Lee, Shih-Ming Chen, Ming-Ling Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 12, Iss 3, p 328 (2022)
In this paper, tungsten oxide (WO3) is deposited on a silicon substrate applied in electrolyte-insulator-semiconductor structures for pH sensing devices. To boost the sensing performance, yttrium (Y) is doped into WO3 membranes, and annealing is inco
Externí odkaz:
https://doaj.org/article/094aeef9de784f5facad7d0305f8d44b
Autor:
Chyuan-Haur Kao, Kuan-Lin Chen, Yi-Shiang Chiu, Lin Sang Hao, Shih-Ming Chen, Ming-Hsien Li, Ming-Ling Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 12, Iss 2, p 188 (2022)
In this study, bismuth trioxide (Bi2O3) membranes in an electrolyte–insulator–semiconductor (EIS) structure were fabricated with pH sensing capability. To optimize the sensing performance, the membranes were treated with two types of plasma—NH3
Externí odkaz:
https://doaj.org/article/539a5dd61cb24042864513a89875a3f9
Autor:
Chyuan-Haur Kao, Yi-Wen Liu, Chih-Chen Kuo, Shih-Ming Chan, Deng-Yi Wang, Ya-Hsuan Lin, Ming-Ling Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 12, Iss 2, p 168 (2022)
In this study, ZnO, AlZnO, Al2O3, and Al2O3-doped ZnO-sensing membranes were fabricated in electrolyte–insulator–semiconductor (EIS) structures. Multiple material analyses indicate that annealing at an appropriate temperature of 500 °C could enh
Externí odkaz:
https://doaj.org/article/9e92407782ed4b11be78b91adf8d5a0b
Autor:
Chyuan-Haur Kao, Chia-Shao Liu, Shih-Ming Chan, Chih-Chen Kuo, Shang-Che Tsai, Ming-Ling Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 11, Iss 12, p 994 (2021)
In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material
Externí odkaz:
https://doaj.org/article/6a9167b5c20b4a6592949cb107752995
Autor:
Chyuan-Haur Kao, Kuan-Lin Chen, Jun-Ru Chen, Shih-Ming Chen, Yaw-Wen Kuo, Ming-Ling Lee, Lukas Jyuhn-Hsiarn Lee, Hsiang Chen
Publikováno v:
Membranes, Vol 12, Iss 1, p 25 (2021)
In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3 sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb2O3 membranes with appropriate annealing had improved material quality and sensing
Externí odkaz:
https://doaj.org/article/a8c651d91f54491c8d00eba8969af872
Autor:
Hao-Zhu Zhang, Ming-Ling Lee, Po-Yuan Chen, Ming Yu Kuo, Cheng-Shan Chen, Hai-Wen Hsu, Ming-Jhe Wu, Hsiang Chen, Pei-Shu Hsieh, Chia-Feng Lin, Chun-Yen Yang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:28287-28296
Cryogenic tests on AlInGaP light emitting diodes (LEDs) were performed by placing LEDs in liquid nitrogen (LN2). To study the optical and electrical variations on the devices, optical and electrical measurements were conducted. Results indicate that
Autor:
Chyuan-Haur, Kao, Kuan-Lin, Chen, Hui-Ru, Wu, Yu-Chin, Cheng, Cheng-Shan, Chen, Shih-Ming, Chen, Ming-Ling, Lee, Hsiang, Chen
Publikováno v:
Membranes. 12(8)
In this study, electrolyte-insulator-semiconductor (EIS) capacitors with Sb
Autor:
Chyuan-Haur, Kao, Kuan-Lin, Chen, Yi-Shiang, Chiu, Lin Sang, Hao, Shih-Ming, Chen, Ming-Hsien, Li, Ming-Ling, Lee, Hsiang, Chen
Publikováno v:
Membranes. 12(2)
In this study, bismuth trioxide (Bi