Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Ming Jui Yang"'
Autor:
Ming Jui Yang, 楊明瑞
104
Breakfast Store is one of the competitiveness career in Taiwan. There are about twenty four breakfast brand franchisees, and over 10 thousands stores so far. Their number and density are more than convenience store (e.g. 7-11, Welcome, Famil
Breakfast Store is one of the competitiveness career in Taiwan. There are about twenty four breakfast brand franchisees, and over 10 thousands stores so far. Their number and density are more than convenience store (e.g. 7-11, Welcome, Famil
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ha2zh2
Publikováno v:
Formosan Journal of Surgery, Vol 50, Iss 2, Pp 81-84 (2017)
Primary appendiceal adenocarcinoma is a rare disease, constituting < 0.5% of all neoplasms of the gastrointestinal origin. Primary appendiceal adenocarcinoma presents classically as an inflammatory condition such as acute appendicitis, and its preope
Externí odkaz:
https://doaj.org/article/7e52cd7c8efe4fd5ab64c666cfeac0f2
Publikováno v:
Formosan Journal of Surgery, Vol 50, Iss 2, Pp 81-84 (2017)
Primary appendiceal adenocarcinoma is a rare disease, constituting < 0.5% of all neoplasms of the gastrointestinal origin. Primary appendiceal adenocarcinoma presents classically as an inflammatory condition such as acute appendicitis, and its preope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb7494c464da5caf11f5912d9f63823f
http://www.e-fjs.org/article.asp?issn=1682-606X
http://www.e-fjs.org/article.asp?issn=1682-606X
Publikováno v:
Journal of Materials Research. 23:2023-2032
We investigated structural and characteristic changes in thin HfO2 films (2Ta2O9/HfO2/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f123f2316efba57881a08bc0371133
https://doi.org/10.1557/jmr.2008.0248
https://doi.org/10.1557/jmr.2008.0248
Publikováno v:
IEEE Transactions on Electron Devices. 55:1027-1034
In this paper, we describe a systematic study of the electrical properties of low-temperature-compatible p-channel polycrystalline-silicon thin-film transistors (poly-Si TFTs) using HfO2 and HfSiOx, high-k gate dielectrics. Because of their larger ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415b0f651a801a3908f99c31e33fd03c
https://doi.org/10.1109/ted.2008.916759
https://doi.org/10.1109/ted.2008.916759
Autor:
Tiao-Yuan Huang, Po-Tsun Liu, Ching Chich Leu, Ting-Chang Chang, Chao-Hsin Chien, C. H. Huang, Tseung-Yuen Tseng, Ming Jui Yang
Publikováno v:
Thin Solid Films. :377-381
The electrical properties of the metal–ferroelectric–insulator–silicon memories with stacked gate configuration of Pt/SrBi 2 Ta 2 O 9 (SBT)/Si 3 N 4 /p-Si (1 0 0) were investigated. In an attempt to operate at low voltage with sufficient large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71911e7afe02119f88d60b47e1abe5e2
https://doi.org/10.1016/s0040-6090(02)00939-2
https://doi.org/10.1016/s0040-6090(02)00939-2
Autor:
Tiao-Yuan Huang, Hung Tao Lin, Chao-Hsin Chien, Ching Chich Leu, Chen Ti Hu, Ming Che Yang, Ming Jui Yang
Publikováno v:
Journal of Applied Physics. 92:1511-1517
The effects of titanium (Ti) and tantalum (Ta) adhesion layers on the ferroelectric and microstructural properties of sol-gel-derived SrBi2Ta2O9 (SBT) films are investigated. It is found that the atoms from the adhesion layer play a significant role
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f870ceeb1b112b8c24962623b9fbbb3
https://doi.org/10.1063/1.1492015
https://doi.org/10.1063/1.1492015
Autor:
Chun-Che Lou, Ming-Jui Yang, Yi-Hsien Lu, Chao-Hsin Chien, Guang-Li Luo, Su-Ching Chiu, Tiao-Yuan Huang
Publikováno v:
IEEE Electron Device Letters. 28:902-904
In this letter, high-performance p-channel polycrystalline-silicon thin-film transistors (TFTs) using hafnium- silicate (HfSiOx) gate dielectric are demonstrated with low- temperature processing. Because of the higher gate-capacitance density, TFTs w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76ecc69b526049e79003aabca8e45a7c
https://doi.org/10.1109/led.2007.904901
https://doi.org/10.1109/led.2007.904901
Autor:
Guang-Li Luo, Chih-Yuan Lu, Ming-Jui Yang, Chia-Wei Wu, Jong-Yu Hsieh, Kuang-Yeu Hsieh, Sheng-Chih Lai, Hang-Ting Lue, Chao-Hsin Chien, Tai-Bor Wu, Erh-Kun Lai, Yan-Kai Chiou, Rich Liu
Publikováno v:
IEEE Electron Device Letters. 28:643-645
The erase characteristics and mechanism of metal- Al2O3-nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB - time) into a J-E curve (J = transient current, E = field in the tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a28cd9e2ce128ceecfefb44247eb4d
https://doi.org/10.1109/led.2007.899993
https://doi.org/10.1109/led.2007.899993
Publikováno v:
Diseases of the Colon & Rectum. 40:1063-1067
PURPOSE: The intracolonic bypass tube has been used both experimentally and clinically to protect the anastomotic site. A newly designed intracolonic bypass, the Valtrac® secured intracolonic bypass, which consisted of a biofragmentable anastomosis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c60476c89e397a87992e1f66c9e190f
https://doi.org/10.1007/bf02050930
https://doi.org/10.1007/bf02050930