Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Ming Jie Zhao"'
Publikováno v:
Crystals, Vol 9, Iss 8, p 402 (2019)
Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate
Externí odkaz:
https://doaj.org/article/d2ee8fcecef24961a7404753bb03219c
Autor:
Ming-Jie Zhao, Yao-Tian Wang, Jia-Hao Yan, Hai-Cheng Li, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100722- (2024)
High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and prefe
Externí odkaz:
https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9
Autor:
Ming-Jie Zhao, Jie Huang, Hai-Cheng Li, Qi-Zhen Chen, Qi-Hui Huang, Wan-Yu Wu, Dong-Sing Wuu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100672- (2024)
High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing
Externí odkaz:
https://doaj.org/article/618f164bafba41b785f7e7f3bc141019
Autor:
Ming-Jie Zhao, Xin-Hao Xu, Mei-Jia Yang, Yu-Yun Lo, Sen-Lin Li, Jing-Feng Bi, Ming-Chun Tseng, Dong-Sing Wuu, Ray-Hua Horng, Hsiao-Wen Zan, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Results in Physics, Vol 44, Iss , Pp 106159- (2023)
An omnidirectional reflector (ODR) consisted of (MgF2)/Ag was employed in AlGaInP-based vertical red light-emitting diodes (LEDs) in order to increase the light extraction hence the wall-plug efficiency. In this structure, the dielectric MgF2 layer w
Externí odkaz:
https://doaj.org/article/9d19037525974212bcf5c7bacf87fed3
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 119901-119901-1 (2021)
Externí odkaz:
https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
Publikováno v:
AIP Advances, Vol 11, Iss 7, Pp 075027-075027-6 (2021)
Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization fie
Externí odkaz:
https://doaj.org/article/a8dbd48ca51941c1a48c7168d330946e
Autor:
Ming-Jie Zhao, Jin-Fa Zhang, Jie Huang, Zuo-Zhu Chen, An Xie, Wan-Yu Wu, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 12, Iss 12, p 1995 (2022)
Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6
Externí odkaz:
https://doaj.org/article/872b6d9380ef46e7892b0829e3939182
Autor:
Qi-Zhen Chen, Chun-Yan Shi, Ming-Jie Zhao, Peng Gao, Wan-Yu Wu, Dong-Sing Wuu, Ray-Hua Horng, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
IEEE Electron Device Letters. 44:448-451
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ebbe9253cdae393b8f0003fa7d50d0d
https://doi.org/10.1109/led.2023.3239379
https://doi.org/10.1109/led.2023.3239379
Autor:
Liang HUANG, Chang-min LI, Cheng-lin LI, Song-xiao HUI, Yang YU, Ming-jie ZHAO, Shi-qi GUO, Jian-jun LI
Publikováno v:
Transactions of Nonferrous Metals Society of China. 32:3835-3859
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bddb3a3e0ad634ba13ef400f5b03d4a5
https://doi.org/10.1016/s1003-6326(22)66062-x
https://doi.org/10.1016/s1003-6326(22)66062-x
Autor:
Ming-Jie Zhao, Zhi-Xuan Zhang, Chia-Hsun Hsu, Xiao-Ying Zhang, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 978 (2021)
Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-prec
Externí odkaz:
https://doaj.org/article/96c60745d2274b48b3d1c88fb2d7f8bc