Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Ming Ji Dai"'
Autor:
Ting-Hui Chiang, Chun-Hao Chang, Li-Hsin Chen, Chun-Ju Lin, An-Chun Luo, Yu-Shan Deng, Po-Han Chang, Ming-Ji Dai, Yu-Chee Tseng
Publikováno v:
2022 IEEE International Conference on Consumer Electronics - Taiwan.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d281fd10577a05f6fa3e00af02dbdee3
https://doi.org/10.1109/icce-taiwan55306.2022.9869213
https://doi.org/10.1109/icce-taiwan55306.2022.9869213
Autor:
Jie Zhang, Wei Lu, Po-Tsang Huang, Sih-Han Li, Tsung-Yi Hung, Shih-Hsien Wu, Ming-Ji Dai, I-Shan Chung, Wen-Chao Chen, Chin-Hung Wang, Shyh-Shyuan Sheu, Hung-Ming Chen, Kuan-Neng Chen, Wei-Chung Lo, Chih-I Wu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a524cd560c088d05dfa87f0efe51b16
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830188
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830188
Autor:
Yu-Mei Cheng, Ren-Shing Cheng, Li-Ling Liao, Jui-Feng Hung, Yu-Lin Chao, Ra-Min Tain, Ming-Ji Dai, Yu-Wei Huang, Heng-Chieh Chien, Chun-Hsien Chien, Wei-Chung Lo, Chau-Jie Zhan, Ching-Kuan Lee, Ming-Jer Kao, Sheng-Tsai Wu, John H. Lau
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 4:1407-1419
In this investigation, a system-in-package (SiP) that consists of a very low-cost interposer with through-silicon holes (TSHs) and with chips on its top and bottom sides (a real 3-D IC integration) is studied. Emphasis is placed on the fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4899c0a43489c421c7a9a17198bae8a
https://doi.org/10.1109/tcpmt.2014.2339832
https://doi.org/10.1109/tcpmt.2014.2339832
Publikováno v:
Microelectronic Engineering. 120:114-120
As a three-terminal power semiconductor device, an insulated gate bipolar transistor (IGBT) chip is characterized by its fast switching and low switching loss, explaining its extensive use in high-power electrical products. However, Joule heating may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb0a07d9f5e3144268a07d622054e1d
https://doi.org/10.1016/j.mee.2013.12.033
https://doi.org/10.1016/j.mee.2013.12.033
Publikováno v:
Microelectronic Engineering. 120:194-199
Energy recycling is an important research topic worldwide. Thermoelectric generators (TEGs) are used to recycle energy. TEGs are suitable for small and medium-sized applications and industrial waste heat harvesting in medium to high temperatures. Tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b86d7381a6d54ee542cecb59ec71140
https://doi.org/10.1016/j.mee.2013.09.014
https://doi.org/10.1016/j.mee.2013.09.014
Publikováno v:
Science and Technology of Welding and Joining. 18:421-424
Solid liquid interdiffusion technique is employed to attach N type Bi2(Te0·92Se0·08)3 thermoelectric material to alumina substrate. The surface finishes of the bonding surfaces for Bi2(Te0·92Se0·08)3 and alumina are Ni and Ag respectively. The bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f236cd6d6fd8e9e4009c74d2ba0ae8a9
https://doi.org/10.1179/1362171813y.0000000116
https://doi.org/10.1179/1362171813y.0000000116
Autor:
Chii Rong Yang, Da-Jeng Yao, Chun Kai Liu, Heng Chieh Chien, Ra Min Tain, Ming Ji Dai, Li-Ling Liao
Publikováno v:
Applied Thermal Engineering. 51:75-83
Because of a lack of appropriate methods and the difficulties of sample preparation, few direct measurements of the thermal conductivity of thermoelectric materials in thin films have been reported. We prepared thermoelectric thin films of four types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abb19a1f12e14861366ba6b96a74c6e
https://doi.org/10.1016/j.applthermaleng.2012.09.004
https://doi.org/10.1016/j.applthermaleng.2012.09.004
Autor:
Heng-Chieh Chien, Ra-Min Tain, Chun-Hsien Chien, Ming-Ji Dai, Wei-Chung Lo, Yung-Jean Rachel Lu
Publikováno v:
International Symposium on Microelectronics. 2013:000611-000617
In this study, we used simulation technique to analyze the thermal characteristics of solo TGV (through-glass via) structure and solo TSV (through-silicon via) structure. The analysis showed, no matter in in-plane direction or in cross-plane directio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c826c70202b76fc158582cb0350ff27
https://doi.org/10.4071/isom-2013-wp11
https://doi.org/10.4071/isom-2013-wp11
Autor:
Sheng-Tsai Wu, Heng-Chieh Chien, Wei-Chung Lo, Ra-Min Tain, Sheng-Liang Li, Ming-Ji Dai, Yu-Lin Chao, Wei Li
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 5:75-84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe1b79e59037b2877c8b78ecf88c9f74
https://doi.org/10.5104/jiepeng.5.75
https://doi.org/10.5104/jiepeng.5.75
Autor:
Jui-Chin Chen, Shang-Chun Chen, Peng Su, Chien-Ying Wu, Li Li, Pei-Jer Tzeng, M. Brillhart, Jie Xue, Yu-Chen Hsin, Ming-Ji Dai, Ching-Kuan Lee, John H. Lau, Chau-Jie Zhan
Publikováno v:
International Symposium on Microelectronics. 2012:001209-001214
The feasibility study of a 3D IC integration SiP is demonstrated in this investigation. The heart of this SiP is a TSV (through-silicon via) passive interposer (28mm × 28mm) with double sided wiring layers. This interposer is used to support a very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c0ef80ec5600621593875a6e73c6f2
https://doi.org/10.4071/isom-2012-thp61
https://doi.org/10.4071/isom-2012-thp61