Výsledky vyhledávání - "Ming Hongn Lin"

Barrier Capability of Hf-N Films with Various Nitrogen Concentrations Against Copper Diffusion in Cu/Hf-N/n[sup +]-p Junction Diodes

Autor: Ray Quan Hsu, Keng Liang Ou, Ming Hongn Lin, Shi Yung Chiou

Publikováno v: Journal of The Electrochemical Society. 152:G138

Hafnium-based (Hf-N) films were prepared by reactive radio frequency (rf)-magnetron sputtering on blank silicon wafers. Nitrogen incorporation and phase transformation of hafnium-based thin film were analyzed by cross-sectional transmission electron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f587ebec1747848b07db9a0a4959e6d0
https://doi.org/10.1149/1.1850367

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání