Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Ming Han Liao"'
Autor:
Ming Han Liao, 廖洺漢
95
In this dissertation, two important topics are included. One is the SiGe based metal-insulator-semiconductor (MIS) light-emitting diodes (LED). The other is the strained Si technology which has received a lot of attention in the semiconductor
In this dissertation, two important topics are included. One is the SiGe based metal-insulator-semiconductor (MIS) light-emitting diodes (LED). The other is the strained Si technology which has received a lot of attention in the semiconductor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36499601592274517659
Autor:
Hui Sun, Zhi-Yue Li, Sheng-Chi Chen, Ming-Han Liao, Jian-Hong Gong, Zhamatuofu Bai, Wan-Xia Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2016 (2021)
In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impu
Externí odkaz:
https://doaj.org/article/7015d0ef67224e3a94ada2d5106cee6d
Publikováno v:
Coatings; Volume 13; Issue 5; Pages: 965
A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), and Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate the growth of CNT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ef658e53f49d12f69a4d2ce3edc013b
Autor:
Toshihiko Saito, Toshiki Mizuguchi, Yuki Okamoto, Minato Ito, Kouhei Toyotaka, Munehiro Kozuma, Takanori Matsuzaki, Hidetomo Kobayashi, Tatsuya Onuki, Yoshikazu Hiura, Ryota Hodo, Shinya Sasagawa, Hitoshi Kunitake, Daiki Nakamura, Hitomi Sato, Hajime Kimura, Chih-Chiang Wu, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang, Shunpei Yamazaki
Publikováno v:
SID Symposium Digest of Technical Papers. 53:94-97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8542706317adba4107807c38e108894a
https://doi.org/10.1002/sdtp.15425
https://doi.org/10.1002/sdtp.15425
Autor:
Yutaka Okazaki, Hiromi Sawai, Masami Endo, Ryousuke Motoyoshi, Daigo Shimada, Hitoshi Kunitake, Shunpei Yamazaki, Kou-Chang Huang, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang
Publikováno v:
SID Symposium Digest of Technical Papers. 53:377-380
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ce9f355df4ced7ec9a229e711fcd2b
https://doi.org/10.1002/sdtp.15499
https://doi.org/10.1002/sdtp.15499
Autor:
Munehiro Kozuma, Yuki Okamoto, Minato Ito, Hiroki Inoue, Toshihiko Saito, Yusuke Komura, Shoki Miyata, Kouhei Toyotaka, Takanori Matsuzaki, Tatsuya Onuki, Hidetomo Kobayashi, Kentaro Sugaya, Takahiro Fujie, Yutaka Okazaki, Ryota Hodo, Yuichi Yanagisawa, Masahiro Wakuda, Tsutomu Murakawa, Shinya Sasagawa, Hitoshi Kunitake, Daiki Nakamura, Takaaki Nagata, Shinya Fukuzaki, Tomoya Aoyama, Hajime Kimura, Shih-Ci Yen, Chuan-Hua Chang, Wen-Hsiang Hsieh, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang, Shunpei Yamazaki
Publikováno v:
SID Symposium Digest of Technical Papers. 53:384-387
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::457dd637cdb636e1d36e40acac09cbf8
https://doi.org/10.1002/sdtp.15501
https://doi.org/10.1002/sdtp.15501
Publikováno v:
International Journal of Automation and Smart Technology, Vol 5, Iss 2, Pp 101-105 (2015)
Thermo-elastic strain is induced by through silicon vias (TSV) due to the difference of thermal expansion coefficients between the copper (∼18 ppm/◦C) and silicon (∼2.8 ppm/◦C) when the structure is exposed to a thermal budget in the three di
Externí odkaz:
https://doaj.org/article/109b501088ae46d7a99083194a68d606
Autor:
Shih-Chieh Hsu, Yi-Hsin Huang, Sheng-Chi Chen, Chao-Kuang Wen, Wen-Sheng Yang, Ming-Han Liao, Tze-Yang Yeh, Ching-Ming Yang
Publikováno v:
Surfaces and Interfaces. 39:102907
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3093dd92e480bb2ad8c110df53e37db
https://doi.org/10.1016/j.surfin.2023.102907
https://doi.org/10.1016/j.surfin.2023.102907
Publikováno v:
International Journal of Automation and Smart Technology, Vol 4, Iss 1, Pp 21-26 (2014)
Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Si0.5Ge0.5/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small va
Externí odkaz:
https://doaj.org/article/5b4bd3bb90304aa5bc5a24c4fd548357
Autor:
Bo-Zhou Liao, Liang-Hsi Chen, Kai-Cheng Chen, Hong-Yi Lin, Yi-Ting Tsai, Ting-Wei Chen, Yi-Cheng Chan, Min-Hung Lee, Ming-Han Liao
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cb9f91c0ce323a85cf1fdc0ec025e75
https://doi.org/10.1109/ectc51906.2022.00285
https://doi.org/10.1109/ectc51906.2022.00285