Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Ming Chi Liaw"'
Autor:
Ming-Chi Liaw, E. Ching-Song Yang, Huey-Liang Hwang, C.C.-H. Hsu, A. Hsiu-Fen Chou, Ya-Chin King, Cheng-Jye Liu, Ten-Sen Chao, Hsiu-Hsiang Pong
Publikováno v:
IEEE Transactions on Electron Devices. 48:1386-1393
In this paper a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8151adb3bff57fdd88d81f483572ec39
https://doi.org/10.1109/16.930656
https://doi.org/10.1109/16.930656
Publikováno v:
IEEE Electron Device Letters. 19:163-166
In this paper, the effects of nitrogen coimplantation with boron into p/sup +/-poly gate in PMOSFETs on the agglomeration effects of CoSi/sub 2/ are studied. The thermal stability of CoSi/sub 2//poly-Si stacked layers can be significantly improved by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d476623797742553715fd8d04e14921
https://doi.org/10.1109/55.669736
https://doi.org/10.1109/55.669736
Publikováno v:
IEEE Transactions on Electron Devices. 45:1912-1919
A novel process which uses N/sub 2//sup +/ implantation into polysilicon gates to suppress the agglomeration of CoSi/sub 2/ in polycide gated MOS devices is presented. The thermal stability of CoSi/sub 2//polysilicon stacked layers can be dramaticall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415dd82662c1e0848679b40e268c2ab4
https://doi.org/10.1109/16.711355
https://doi.org/10.1109/16.711355
Autor:
Ming-Chi Liaw, Chrong Jung Lin, Sheng-fu Horng, Charles Ching-Hsiang Hsu, Ping-Yu Kuei, Ching-Song Yang
Publikováno v:
Applied Surface Science. :116-120
Red-shift of photoluminescence (PL) spectra and increasing intensity after subsequent annealing have been observed in plasma-enhanced chemical-vapor-deposition (PECVD) silicon-rich-oxide (SRO). Based on FTIR results, however, PECVD SRO does experienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e5aa0069937823a36e3f0a7a3e6601
https://doi.org/10.1016/s0169-4332(96)00895-1
https://doi.org/10.1016/s0169-4332(96)00895-1
Autor:
Chin Cheng Chou, Show-Jen Chiou, Shie-Ming Peng, Yih-Chern Horng, Ming Chi Liaw, Wen-Feng Liaw, Chia Huei Lai, Gene-Hsiang Lee
Publikováno v:
Inorganic Chemistry. 34:3755-3759
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57bda37c7b68842e69454e3a74bb0ac0
https://doi.org/10.1021/ic00118a024
https://doi.org/10.1021/ic00118a024
Autor:
Tan Fu Lei, W.H. Chang, Chih Peng Lu, Tien-Sheng Chao, Wen Lu Yang, Ming Chi Liaw, Ming Shih Tsai, Chao Chyi Chen, Tung-Ming Pan
Publikováno v:
IEEE Electron Device Letters. 21:338-340
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaf1f8a1779907ec4d65777ea956b4fd
https://doi.org/10.1109/55.847373
https://doi.org/10.1109/55.847373
Publikováno v:
IEEE Transactions on Electron Devices. 46:1294-1296
This paper presents a novel flash memory cell, BiNOR, suitable for high-speed, low-power, and high-performance application. The proposed BiNOR structure allows random access, channel Fowler-Nordheim (FN) tunneling program/erase in a NOR-type array (p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9ecaee6848a65dcaf624e57d5dc7d8
https://doi.org/10.1109/16.766901
https://doi.org/10.1109/16.766901
Publikováno v:
1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453).
This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, high speed, and low power operation. With the localized shallow p-well at bit-line, BiNOR realizes low power channel FN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a09fa7ab70e7236b3179114f9a0ad62a
https://doi.org/10.1109/vtsa.1999.786036
https://doi.org/10.1109/vtsa.1999.786036
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
A novel 3D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in a NOR array, which guarantees better tunnel oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a131a88e03184eff0586734e026c5dc
https://doi.org/10.1109/vlsit.1999.799352
https://doi.org/10.1109/vlsit.1999.799352
Publikováno v:
J. Chem. Soc., Chem. Commun.. :359-361
Two novel crystal structures containing the eclipsed conformation of diaminylato type ligands and metal–metal bonds are described; bis[bis{(phenanthrene-9,10-diamin)ylato}cobalt(II)] contains a CoII–CoII bond [2.689(1)A] and two δ bonds between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2321259079d5f6996f826d7417c6f303
https://doi.org/10.1039/c39930000359
https://doi.org/10.1039/c39930000359