Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Ming, Wenmei"'
Autor:
Wang, Yujia, He, Qing, Ming, Wenmei, Du, Mao-Hua, Lu, Nianpeng, Cafolla, Clodomiro, Fujioka, Jun, Zhang, Qinghua, Zhang, Ding, Shen, Shengchun, Lyu, Yingjie, N'Diaye, Alpha T., Arenholz, Elke, Gu, Lin, Nan, Cewen, Tokura, Yoshinori, Okamoto, Satoshi, Yu, Pu
Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the di
Externí odkaz:
http://arxiv.org/abs/2003.12982
Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated subs
Externí odkaz:
http://arxiv.org/abs/1505.05073
Publikováno v:
Proc. Natl. Acad. Sci. U. S. A., 2014, 111, 14378-14381
Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111) surface w
Externí odkaz:
http://arxiv.org/abs/1411.5314
Publikováno v:
Physical Review Letters 113, 236802 (2014)
Graphene, made of sp2 hybridized carbon, is characterized with a Dirac band, representative of its underlying 2D hexagonal lattice. Fundamental understanding of graphene has recently spurred a surge of searching for 2D topological quantum phases in s
Externí odkaz:
http://arxiv.org/abs/1411.0786
Autor:
Ming, Wenmei, Liu, Feng
We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in Fe-deposition
Externí odkaz:
http://arxiv.org/abs/1406.0490
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of 1.2~eV. We have
Externí odkaz:
http://arxiv.org/abs/1404.5644
Quantum manifestations of various properties of metallic thin films by quantum size effect (QSE) have been studied intensively. Here, using first-principles calculations, we show quantum manifestation in dielectric properties of Al(111) ultrathin fil
Externí odkaz:
http://arxiv.org/abs/1404.5641
Publikováno v:
Sci. Rep. 4, 7102 (2014)
For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approac
Externí odkaz:
http://arxiv.org/abs/1401.3392
The effects of Li doping in MgH$_2$ on H-diffusion process are investigated, using first-principles calculations. We have identified two key effects: (1) The concentration of H vacancy in the $+1$ charge state (V$_H^{+1}$) can increase by several ord
Externí odkaz:
http://arxiv.org/abs/1312.1620
Autor:
Zhang, Jian-Min, Ming, Wenmei, Huang, Zhigao, Liu, Gui-Bin, Kou, Xufeng, Fan, Yabin, Wang, Kang L., Yao, Yugui
Publikováno v:
Physical Review B 88, 235131 (2013)
Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using first-princip
Externí odkaz:
http://arxiv.org/abs/1311.5331