Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mineo Miura"'
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a371bda57e14f8a5ca7c1ab9fc6040
https://doi.org/10.1109/edssc.2019.8754464
https://doi.org/10.1109/edssc.2019.8754464
Publikováno v:
Materials Science Forum. :933-936
This paper presents three different structures of Schottky diodes that were fabricated with low Schottky barrier heights. To reduce the forward voltage drop, the introduction of a lower Schttoky barrier is necessary. One of key issues associated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77fec010f0fb5b4959ca720bc7d92f30
https://doi.org/10.4028/www.scientific.net/msf.717-720.933
https://doi.org/10.4028/www.scientific.net/msf.717-720.933
Autor:
Akira Kamisawa, Keiji Okumura, Yuki Nakano, Noriaki Kawamoto, Takukazu Otsuka, Takashi Nakamura, Mineo Miura
Publikováno v:
Silicon Carbide: Power Devices and Sensors, Volume 2
Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We succeeded in fabricating very large area (1 cm 2 ) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab3862cb43abf99762d6ea0fb8e9355
https://doi.org/10.1002/9783527629077.ch12
https://doi.org/10.1002/9783527629077.ch12
Autor:
Mineo Miura, Keiji Okumura, Akira Kamisawa, Takashi Nakamura, Noriaki Kawamoto, Takukazu Otsuka, Yuki Nakano
Publikováno v:
physica status solidi (a). 206:2403-2416
Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We succeeded in fabricating very large area (1 cm 2 ) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ecccba7f66e1211ac5f87e1105f2a33
https://doi.org/10.1002/pssa.200925196
https://doi.org/10.1002/pssa.200925196
Publikováno v:
Solar Energy Materials and Solar Cells. 74:183-193
Spatial distribution of minority-carrier lifetime (τ) in multicrystalline silicon solar cells was investigated. By mapping of τ, a wide distribution in a higher-efficiency cell and a narrow distribution in a lower-efficiency cell was found, respect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b28b43f29cfa69c1efc770624914b991
https://doi.org/10.1016/s0927-0248(02)00063-6
https://doi.org/10.1016/s0927-0248(02)00063-6
Publikováno v:
Materials Science Forum. :659-662
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f93616b047f471f4119726679144a8c
https://doi.org/10.4028/www.scientific.net/msf.389-393.659
https://doi.org/10.4028/www.scientific.net/msf.389-393.659
Publikováno v:
SILICON CARBIDE AND RELATED MATERIALS - 2002. :859-862
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63db6ba307b3635134a6500e9ce18847
http://hdl.handle.net/2433/8813
http://hdl.handle.net/2433/8813
Publikováno v:
Japanese Journal of Applied Physics. 41:L40-L42
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) of a SiC multiple-pn-junction structure are presented. The structure was grown by atmospheric-pressure chemical vapor deposition using silane, propane and hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1b0ea1059c74b9ddcdb5f05ac65be47
https://doi.org/10.1143/jjap.41.l40
https://doi.org/10.1143/jjap.41.l40