Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Minbo Liu"'
Publikováno v:
BMC Musculoskeletal Disorders, Vol 23, Iss 1, Pp 1-9 (2022)
Abstract Background Osteoarthritis (OA) is a leading cause of disability and a source of societal costs among older adults, especially with an increasingly obese population. However, very few published studies have investigated the burden of knee and
Externí odkaz:
https://doaj.org/article/c48d9359efd3476099898216c6268964
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract To observe and compare the curative effect of a locking plate plus titanium cable under the Guide device and clavicular hook plate in the treatment of Neer type II distal clavicle fractures. A prospective cohort study was conducted to analys
Externí odkaz:
https://doaj.org/article/7f23bfcb19e549a3ab638475836491e4
Publikováno v:
Journal of Orthopaedic Surgery and Research, Vol 14, Iss 1, Pp 1-7 (2019)
Abstract Background Calcium and vitamin D play important roles in bone health as essential nutrients. We explored whether serum calcium, 25(OH)D were associated with bone mineral density (BMD) in older adults. Methods This cross-sectional study was c
Externí odkaz:
https://doaj.org/article/2b2f02b380e24f8c9ab57b36101d5980
Publikováno v:
Frontiers in Medicine, Vol 7 (2020)
Aims: Evidence linking serum uric acid (sUA) and bone mineral density (BMD) in adolescents is very limited. To the best of our knowledge, only one report has focused on the relationship between sUA and BMD in adolescents. Thus, this study aimed to de
Externí odkaz:
https://doaj.org/article/3ac9f9bb90a74cd1ad6673db22f918bd
Autor:
Yuanyuan Xue, Zujun Wang, Baoping He, Zhibin Yao, Minbo Liu, Wuying Ma, Jiangkun Sheng, Guantao Dong, Junshan Jin
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125222-125222-9 (2017)
The CMOS image sensors (CISs) are irradiated with neutron from a nuclear reactor. The dark signal in CISs affected by neutron radiation is studied theoretically and experimentally. The Primary knock-on atoms (PKA) energy spectra for 1 MeV incident ne
Externí odkaz:
https://doaj.org/article/773bd91dee614d42a7858d7f99d288ab
Autor:
Zujun Wang, Wuying Ma, Shaoyan Huang, Zhibin Yao, Minbo Liu, Baoping He, Jing Liu, Jiangkun Sheng, Yuan Xue
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035205-035205-10 (2016)
The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology a
Externí odkaz:
https://doaj.org/article/c886345366194371893a1e042c922a80
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107134-107134-8 (2015)
The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealin
Externí odkaz:
https://doaj.org/article/6e2679bc93ab47458e56f14f0f0f2f40
Autor:
Yuanyuan Xue, Zujun Wang, Wei Chen, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong, Junshan Jin
Publikováno v:
Sensors, Vol 17, Iss 12, p 2781 (2017)
Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the
Externí odkaz:
https://doaj.org/article/1d035fb7e3bf4887ae16908d97c5cc1a
Publikováno v:
AIP Advances, Vol 5, Iss 6, Pp 067131-067131-9 (2015)
The experiments of reactor neutron radiation effects on linear CCDs are presented. The output voltage in dark field after neutron radiation are presented and compared at different clock pulse frequency. The degradation phenomena are analyzed in depth
Externí odkaz:
https://doaj.org/article/b7ea742af72f43e5a0afe08e024cf4e5
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027128-027128-10 (2015)
The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in th
Externí odkaz:
https://doaj.org/article/a48a9434628f4074a134323a2776e90b