Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Min-nan Ou"'
Autor:
Zi-Yi Li, Hao-Yu Cheng, Sheng-Hsun Kung, Hsuan-Chun Yao, Christy Roshini Paul Inbaraj, Raman Sankar, Min-Nan Ou, Yang-Fang Chen, Chi-Cheng Lee, Kung-Hsuan Lin
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 750 (2023)
Indium selenide (InSe) is an emerging van der Waals material, which exhibits the potential to serve in excellent electronic and optoelectronic devices. One of the advantages of layered materials is their application to flexible devices. How strain al
Externí odkaz:
https://doaj.org/article/13d5b629af924f7595e975195b8f180b
Autor:
Min-Nan Ou, 歐敏男
88
It is know that the crystal structure and the magnetic ordering in La1-xAxMnO3(A=Ca,Sr,Ba) may disrupted by introducing various defect. This disorder weakens the Hund coupling and, thus, the double-exchange interaction between Mn3+ and Mn4+.
It is know that the crystal structure and the magnetic ordering in La1-xAxMnO3(A=Ca,Sr,Ba) may disrupted by introducing various defect. This disorder weakens the Hund coupling and, thus, the double-exchange interaction between Mn3+ and Mn4+.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86943028737882052442
Autor:
I. Panneer Muthuselvam, R. Madhumathy, K. Saranya, K. Moovendaran, Suheon Lee, Kwang-Yong Choi, Wei-tin Chen, Chin-Wei Wang, Peng-Jen Chen, M. Ponmurugan, Min-nan Ou, Yang-Yuan Chen, Heung-Sik Kim, R. Sankar
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76de9c737f992b2346da869da3b2103a
https://doi.org/10.1103/physrevb.106.214417
https://doi.org/10.1103/physrevb.106.214417
Autor:
Fan-Yun Chiu, Tsu-Lien Hung, Cheng-Yen Liu, Ya-Hsin Pai, Wei-Liang Chien, Peng-Jen Chen, Ting-Kuo Lee, Ming-Jye Wang, Min-Nan Ou, Chang C. Tsuei, Maw-Kuen Wu, Chia-Seng Chang, Yang-Yuan Chen
Publikováno v:
Physical Review B. 105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbe427aa48c2b0e245b9d04ca789a0b
https://doi.org/10.1103/physrevb.105.174512
https://doi.org/10.1103/physrevb.105.174512
Publikováno v:
Materials Today Communications. 33:104411
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4223685c5c277a0bc9c3b52526870605
https://doi.org/10.1016/j.mtcomm.2022.104411
https://doi.org/10.1016/j.mtcomm.2022.104411
Autor:
Ranganayakulu K, Vankayala, Tian-Wey, Lan, Prakash, Parajuli, Fengjiao, Liu, Rahul, Rao, Shih Hsun, Yu, Tsu-Lien, Hung, Chih-Hao, Lee, Shin-Ichiro, Yano, Cheng-Rong, Hsing, Duc-Long, Nguyen, Cheng-Lung, Chen, Sriparna, Bhattacharya, Kuei-Hsien, Chen, Min-Nan, Ou, Oliver, Rancu, Apparao M, Rao, Yang-Yuan, Chen
Publikováno v:
Advanced Science
A record high zT of 2.2 at 740 K is reported in Ge0.92Sb0.08Te single crystals, with an optimal hole carrier concentration ≈4 × 1020 cm−3 that simultaneously maximizes the power factor (PF) ≈56 µW cm−1 K−2 and minimizes the thermal conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::647d99049421bf6ee030ee8ccdadba95
https://pubmed.ncbi.nlm.nih.gov/33344133
https://pubmed.ncbi.nlm.nih.gov/33344133
Autor:
Yang-Yuan Chen, Min-Nan Ou, Peng-Jen Chen, Tien-Ming Chuang, Hsiao-Wen Chang, Ming-Jye Wang, Maw-Kuen Wu, Chia-Seng Chang, Syu-You Guan, Vankayala Krishna Ranganayakulu
Publikováno v:
Superconductor Science and Technology. 34:045019
In order to confirm the superconductivity observed in hexagonal ϵ-NbN reported recently, we have deposited NbN film on (0001) 4H-SiC substrate, with good lattice match, intentionally to grow hexagonal NbN phase. The detailed structural analysis show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b52087d08eb86a0072e6b39c386879
https://doi.org/10.1088/1361-6668/abe360
https://doi.org/10.1088/1361-6668/abe360
Publikováno v:
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO); 2009, p7-8, 2p