Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Min-chul Yu"'
Autor:
Junsik Hwang, Hyun-Joon Kim-Lee, Seog Woo Hong, Joon-Yong Park, Dong Kyun Kim, Dongho Kim, Sanghoon Song, Jonghyun Jeong, Yongchan Kim, Min Jae Yeom, Min-chul Yu, Joosung Kim, Younghwan Park, Dong-Chul Shin, Sungjin Kang, Jai-Kwang Shin, Yongsung Kim, Euijoon Yoon, Hojin Lee, Geonwook Yoo, Jaewook Jeong, Kyungwook Hwang
Publikováno v:
Nature Electronics. 6:216-224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2078043eca41ac53a9c2cac9ad8136f7
https://doi.org/10.1038/s41928-022-00912-w
https://doi.org/10.1038/s41928-022-00912-w
Autor:
Bo-Ram Kim, Sun-Kyu Hwang, Joonyong Kim, Dong-Chul Shin, Jun Hyuk Park, Young-Hwan Park, Woo-Chul Jeon, In-jun Hwang, Soogine Chong, Jae-joon Oh, Min Chul Yu, Jai-Kwang Shin, Jongseob Kim
Publikováno v:
IEEE Electron Device Letters. 42:1208-1211
Wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaN HEMT devices is suggested. Two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de4c775ad8cb110dc7a74f73a5836b5
https://doi.org/10.1109/led.2021.3090341
https://doi.org/10.1109/led.2021.3090341
Autor:
Bo-Ram Kim, Young-Hwan Park, Dong-Chul Shin, Sun-Kyu Hwang, Jongseob Kim, Min Chul Yu, Joonyong Kim, Jun Hyuk Park, Jai-Kwang Shin, Soogine Chong, Jae-joon Oh, In-jun Hwang
Publikováno v:
IEEE Electron Device Letters. 42:557-560
This work reports the transient measurement of the AlGaN/GaN high electron-mobility transistor (HEMT) drift region potential in the high power state during switching. The effect of high power stress has been reported by device characterization after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf40e61e5a188b1ee19fcc6e91066b9
https://doi.org/10.1109/led.2021.3058329
https://doi.org/10.1109/led.2021.3058329
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers - A. 44:443-449
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5ebcb480abd32c30d3bba55e2da7b6
https://doi.org/10.3795/ksme-a.2020.44.6.443
https://doi.org/10.3795/ksme-a.2020.44.6.443
Autor:
Gunwoo Noh, Min Chul Yu
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers - A. 44:261-268
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca253599aa0b98560be470bf63ef03db
https://doi.org/10.3795/ksme-a.2020.44.4.261
https://doi.org/10.3795/ksme-a.2020.44.4.261