Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Min-Yann Hsieh"'
Autor:
Min-Yann Hsieh, 謝旻諺
95
In this paper, we present a novel method to fabricate textured GaN-based LEDs using a SiO2 nano-mask and ICP dry etching. The SiO2 nano-particles are placed on top of the p-type layer simply by spin-coating or immersion. The optical output po
In this paper, we present a novel method to fabricate textured GaN-based LEDs using a SiO2 nano-mask and ICP dry etching. The SiO2 nano-particles are placed on top of the p-type layer simply by spin-coating or immersion. The optical output po
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/92184111929570229357
Autor:
Cheng-Pin Chen, Min-Yung Ke, Hung-Li Chiang, Cheng-Yin Wang, Jian-Jang Huang, Hung-Hsien Chen, Liang-Yi Chen, Yun-Wei Cheng, Min-Yann Hsieh
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1242-1249
In this study, the process of nanosphere lithography was developed and applied to LED surface texturing and nanorod device fabrication. We observed a texture-size-dependent improvement of total light output. While the increase of output optical power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c661264e657064bac57c6836dcdbdd4c
https://doi.org/10.1109/jstqe.2009.2016433
https://doi.org/10.1109/jstqe.2009.2016433
Publikováno v:
IEEE Journal of Quantum Electronics. 44:468-472
We present a practical process to fabricate InGaN-GaN multiple quantum well nanorod structures. By using silica nanoparticles as the etch mask and followed by dry etching, nanorods with diameter 100 nm can be uniformly fabricated over the entire 2-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc97c51b98229b267e7cd4534769a4b
https://doi.org/10.1109/jqe.2007.916665
https://doi.org/10.1109/jqe.2007.916665
Autor:
Dong Ming Yeh, Yi Cheng Yu, Cheng Yin Wang, Min Yann Hsieh, Cheng-Pin Chen, Yun Wei Cheng, Chih Feng Lu, Tzu Pu Lin, Jian-Jang Huang, Chi Feng Huang, Min Yung Ke, Chih-Chung Yang, Liang Yi Chen
Publikováno v:
IEEE Electron Device Letters. 29:658-660
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e693ae5a79680c593f835d77594afae6
https://doi.org/10.1109/led.2008.2000918
https://doi.org/10.1109/led.2008.2000918
Autor:
Lung-Han Peng, Hung-Hsien Chen, Kun-Mao Pan, Jian-Jang Huang, Min-Yung Ke, Cheng-Pin Chen, Cheng-Yin Wang, Yun-Wei Cheng, Min-Yann Hsieh, Han-Ming Wu
Publikováno v:
Nanotechnology. 20:035202
We demonstrate a method of utilizing self-assembled nanorod array reflectors to collect the laterally propagating guided modes from a light emitting diode (LED). We measure an enhancement factor of 12.2% and 18.4%, respectively, from the sidewall emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dba59d7f220756279dcfccb5e9a0262
https://doi.org/10.1088/0957-4484/20/3/035202
https://doi.org/10.1088/0957-4484/20/3/035202
Autor:
Min-Yung Ke, Liang-Yi Chen, Yun-Wei Cheng, Min-Yann Hsieh, Lung-Han Peng, Cheng-Yin Wang, Han-Ming Wu, Cheng-Pin Chen, Jian-Jang Huang
Publikováno v:
Optics Express. 16:10549
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres follo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38a69a6578acc53330da1c6bf977d4d9
https://doi.org/10.1364/oe.16.010549
https://doi.org/10.1364/oe.16.010549
Autor:
Min-Yung Ke, Cheng-Yin Wang, Liang-Yi Chen, Hung-Hsien Chen, Hung-Li Chiang, Yun-Wei Cheng, Min-Yann Hsieh, Cheng-Pin Chen, JianJang Huang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics; Jul/Aug2009, Vol. 15 Issue 4, p1242-1249, 8p
Autor:
Min-Yann Hsieh, Cheng-Yin Wang, Liang-Yi Chen, Tzu-Pu Lin, Min-Yung Ke, Yun-Wei Cheng, Yi-Cheng Yu, Cheng Pin Chen, Dong-Ming Yeh, Chih-Feng Lu, Chi-Feng Huang, Yang, C. C., Jian Jang Huang
Publikováno v:
IEEE Electron Device Letters; Jul2008, Vol. 29 Issue 7, p658-660, 3p, 5 Graphs