Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Min-Su Ahn"'
Autor:
Chang-Yong Lee, Seung-Jun Bae, Jeong-Woo Lee, Seung-Hoon Oh, Yong-Hun Kim, Young-Soo Sohn, Gyo-Young Jin, Gong-Heum Han, Dong-seok Kang, Young-Hun Seo, Gun-hee Cho, Seung-Hyun Cho, Sam-Young Bang, Seong-Jin Jang, Youn-sik Park, Yong-Jun Kim, Kwang-Il Park, Jung-Hwan Choi, Seouk-Kyu Choi, Kyung-Bae Park, Sung-Geun Do, Young-Ju Kim, Keon-woo Park, Ji-Hak Yu, Jae-Sung Kim, Su-Yeon Doo, Jae-Koo Park, Chan-Yong Lee, Chang-Ho Shin, Hye-Jung Kwon, Byung-Cheol Kim, Hyuk-Jun Kwon, Sang-Sun Kim, Min-Su Ahn, Hyun-Soo Park, Chul-Hee Jeon, Lee Yong-Jae, Ki-Hun Yu, Sang-Yong Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:197-209
The graphic DRAM standard GDDR6 is developed to overcome the limitation of previous standards GDDR5/5X for achieving high-speed operation. This paper introduces 16-Gb GDDR6 DRAM with a per-bit trainable single-ended decision feedback equalizer (DFE),
Autor:
Seouk-Kyu Choi, Young-Kwan Kim, Seung-Jun Bae, Seung-Hyun Cho, Jae-Woo Jung, Dae Hyun Kim, Byung-Cheol Kim, Sung-Woo Yoon, Jae-Koo Park, Yong-Hun Kim, Si-Hyeong Cho, Jung-Bae Lee, Jinyong Choi, Dae-Hyun Kwon, Seong-hoon Kim, Chan-Young Kim, Byongwook Na, Yong-Jun Kim, Jae-Woo Lee, Dong-Yeon Park, Hye-In Choi, Reum Oh, Hyung-Jin Kim, Min-Su Ahn, Dongkeon Lee, Jihwa You, Nam Sung Kim, Jaemin Choi, Jun-Ho Kim, Jeong-Don Ihm, Hyung-Seok Cha, Kyoung-Ho Kim, Young-Jae Park, Min-Soo Jang
Publikováno v:
ISSCC
The demand for mobile DRAM has increased, with a requirement for high density, high data rates, and low-power consumption to support applications such as 5G communication, multiple cameras, and automotive. Thus, density has increased from 2Gb [1] to
Publikováno v:
Journal of the Korean Society of Manufacturing Process Engineers. 15:93-99
Autor:
Jung-Hwan Choi, In-Dal Song, Jin-Oh Ahn, Kwang-Il Park, Daesik Moon, Dong-Ju Kim, Kyung-Soo Kim, Jin-Seok Heo, Seung-Jun Bae, Seokhong Kwon, Young-Soo Sohn, Jin-Hyeok Baek, Jongmin Kim, Byung-Cheol Kim, Hyuck-Joon Kwon, Chang-Kyo Lee, Seong-Jin Jang, Jeonghyeon Cho, Min-Su Ahn, Jeong-Sik Nam, Ilgweon Kim, Seok-Hun Hyun, Jeong-Hoon Oh, Gil-Hoon Cha, Jae-Joon Song, Ki-Ho Kim
Publikováno v:
VLSI Circuits
A sub-0.85V, 6.4Gb/s TX-interleaved transceiver with fast wake-up time using 2-step charging control and a V OH calibration scheme is implemented using 20nm DRAM process. Adopting an interleaving scheme based on improved DRAM process, the proposed de
Autor:
Lee Yong-Jae, Seung-Hyun Cho, Kyung-Bae Park, Seong-Jin Jang, Jong-Ho Lee, Min-Woo Won, Su-Yeon Doo, Youngseok Lee, Jung-Bum Shin, Youn-sik Park, Hyun-Soo Park, Jae-Sung Kim, Kwang-Il Park, Keon-woo Park, Sang-Yong Lee, Chul-Hee Jeon, Yoon-Joo Eom, Dong-seok Kang, Yong-Hun Kim, Ki-Hun Yu, Jae-Koo Park, Chan-Yong Lee, Sang-Hoon Jung, Yong-Jun Kim, Young-Soo Sohn, Gun-hee Cho, Jung-Hwan Choi, Seung-Jun Bae, Chang-Yong Lee, Sang-Sun Kim, Beob-Rae Cho, Chang-Ho Shin, Seung-Hoon Oh, Young-Sik Kim, Byeong-Cheol Kim, Yoon-Gue Song, Sung-Geun Do, Hyuk-Jun Kwon, Young-Ju Kim, Sam-Young Bang, Ji-Suk Kwon, Min-Su Ahn, Young-Hun Seo, Hyung-Kyu Kim, Jeong-Woo Lee, Gong-Heum Han, Ji-Hak Yu, Hye-Jung Kwon, Seouk-Kyu Choi
Publikováno v:
ISSCC
Starting at 512Mb 6Gb/s/pin [1], GDDR5's speed and density have been steadily developing for about 10 years; recently achieving 8Gb 9Gb/s/pin [2] with per-pin timing training. Although 8Gb GDDR5X can operate at 12Gb/s [3] by increasing the burst leng
Publikováno v:
Key Engineering Materials. :476-483
Use of light materials such as aluminum, magnesium and carbon fiber reinforced plastic (CFRP) has been increased to achieve the light-weight car body in automotive industry. For successful multi-material design of automotive body, the joining method
Autor:
Hye-Yoon Joo, Seung-Jun Bae, Young-Soo Sohn, Young-Sik Kim, Kyung-Soo Ha, Min-Su Ahn, Young-Ju Kim, Yong-Jun Kim, Ju-Hwan Kim, Won-Jun Choi, Chang-Ho Shin, Soo Hwan Kim, Byeong-Cheol Kim, Seung-Bum Ko, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin
Publikováno v:
ISSCC
A 9Gb/s/pin 8Gb GDDR5 DRAM is implemented using a 20nm CMOS process. To cover operation up to 9Gb/s, which is the highest data-rate among implemented GDDR5 DRAMs [1], this work includes an NBTI monitor, a WCK clock receiver with equalizing and duty-c
Autor:
Min-Su Ahn
Publikováno v:
The Journal of the Korea Contents Association. 9:76-83
This paper presents a compression method for animated meshes or mesh sequences which have a shared connectivity and geometry streams. Our approach is based on static semi-regular mesh compression algorithm introduced by Khodakovky et al. Our encoding
Autor:
Yong-Cheol Bae, Min-Su Ahn, Seong-Jin Jang, Joon-Young Park, Yoon-Joo Eom, Seokhong Kwon, Sang-Hyuk Yoon, Won Young Lee, Gyo-Young Jin, Seung-Jun Bae, Ki-Ho Kim, Baekkyu Choi, Jung-Hwan Choi, Daesik Moon, Jongmin Kim, Chang-Kyo Lee
Publikováno v:
VLSIC
A 6.4Gb/s TX-interleaving (TI) technique at sub-1V supply voltage is implemented with 25nm DRAM process for the future mobile DRAM interface which requires 51.2 GBps (2X Bandwidth of LPDDR4). A newly proposed 2-channel TX interleaving technique with
Publikováno v:
ETRI Journal. 28:182-190
The circuit modeling of interdigitated capacitors fabricated by high-k low-temperature co-fired ceramic (LTCC) sheets was investigated. The s-parameters of each test structure were measured from 50 MHz to 10 GHz, and the modeling was performed using