Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Min-Lu Kao"'
Autor:
Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang
Publikováno v:
Micromachines, Vol 13, Iss 12, p 2140 (2022)
Substrate voltage (VSUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be
Externí odkaz:
https://doaj.org/article/1e70b521f9bc477593c31e7b54c0d9b9
Publikováno v:
Materials Research Express, Vol 9, Iss 10, p 105903 (2022)
By modulating the thermal stress during film growth, the strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The
Externí odkaz:
https://doaj.org/article/b6b4171c33704bbf9a3178a2ce385a41
Autor:
Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 43:2105-2108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1025c069493b75abac9c7905ee2af4ff
https://doi.org/10.1109/led.2022.3216620
https://doi.org/10.1109/led.2022.3216620
Autor:
Min-Lu Kao, Ching-Ting Lee, Quang Ho Luc, Edward Yi Chang, Jui-Sheng Wu, Chih-Chieh Lee, Chih-Yi Yang, Chia-Hsun Wu, Daisuke Ueda, You-Chen Weng
Publikováno v:
IEEE Electron Device Letters. 42:1268-1271
A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d664166a15d21d9bc94772a6ed81976
https://doi.org/10.1109/led.2021.3098726
https://doi.org/10.1109/led.2021.3098726
Autor:
You-Chen Weng, Heng-Tung Hsu, Yi-Fan Tsao, Debashis Panda, Hsuan-Yao Huang, Min-Lu Kao, Yu-Pin Lan, Edward Yi Chang, Ching-Ting Lee
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035002
In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b03d4d81828babe50dfd2ae7765b5af
https://doi.org/10.1149/2162-8777/acbf72
https://doi.org/10.1149/2162-8777/acbf72
Autor:
You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee
Publikováno v:
Materials; Volume 15; Issue 3; Pages: 703
Materials, Vol 15, Iss 703, p 703 (2022)
Materials, Vol 15, Iss 703, p 703 (2022)
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36c50a256c43f9e6239167484789a1e5
Publikováno v:
Applied Physics Express. 13:065501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2daa4a8a5a54ed7d418c551e87dcdc
https://doi.org/10.35848/1882-0786/ab8b51
https://doi.org/10.35848/1882-0786/ab8b51