Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Min-Hui Chuang"'
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 9-16 (2024)
Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO
Externí odkaz:
https://doaj.org/article/391eed6e6b14405ca2a88201290c828e
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-13 (2022)
Abstract In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with th
Externí odkaz:
https://doaj.org/article/eebfb6b370434a23ab9686317b46bc85
Autor:
Daisuke Ohori, Min-Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming-Yi Lee, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 148-152 (2021)
The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe com
Externí odkaz:
https://doaj.org/article/6408b68c71fe4ef7b9dd8465f556e0b3
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 68 (2022)
Two-dimensional (2D) materials with binary compounds, such as transition-metal chalcogenides, have emerged as complementary materials due to their tunable band gap and modulated electrical properties via the layer number. Ternary 2D materials are pro
Externí odkaz:
https://doaj.org/article/6ac644104416423f8e6355ff217c1dd7
Publikováno v:
Materials, Vol 12, Iss 9, p 1492 (2019)
In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cros
Externí odkaz:
https://doaj.org/article/be6d8127d1354e28b1e16072ed77dc5c
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:4835-4848
Publikováno v:
2023 24th International Symposium on Quality Electronic Design (ISQED).
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
Autor:
Atsushi Yamamoto, Sou Takeuchi, Seiji Samukawa, Ming-Yi Lee, Jenn-Hwan Tarng, Yiming Li, Yao-Jen Lee, Kazuhiko Endo, Daisuke Ohori, Asahi Sato, Masayuki Murata, Min-Hui Chuang
Publikováno v:
IEEE Open Journal of Nanotechnology. 2:148-152
The phonon transport in the lateral direction for gap-controlled Si nanopillar/SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite