Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Min-Hua Lee"'
Autor:
Min-Hua Lee, 李旻樺
90
The purposes of this study were to investigate the motivational beliefs and academic motivational regulation strategies of senior high school students, and to explore the relationships among self-efficacy, expectancy for success, academic tas
The purposes of this study were to investigate the motivational beliefs and academic motivational regulation strategies of senior high school students, and to explore the relationships among self-efficacy, expectancy for success, academic tas
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/33840756158613687040
Publikováno v:
Applied Economics Letters. 30:19-26
This study aims to determine whether companies with surpluses are more capable of maintaining their dividend rate if they issue cash dividends from capital reserves. Further, it considers whether s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33b814b945897723fcb8846ca9c389cb
https://doi.org/10.1080/13504851.2021.1971609
https://doi.org/10.1080/13504851.2021.1971609
Autor:
Min-Hua Lee, Chung-Kung Lo
Publikováno v:
Proceedings of the 30th European Safety and Reliability Conference and 15th Probabilistic Safety Assessment and Management Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4063a5d3f500fe62cb7307a85514b807
https://doi.org/10.3850/978-981-14-8593-0_4991-cd
https://doi.org/10.3850/978-981-14-8593-0_4991-cd
Autor:
Shen-Li Chen, Min-Hua Lee
Publikováno v:
IEEE Transactions on Industry Applications. 53:2888-2893
The effects of leakage-biased voltage ( V LB) levels are investigated in this paper, which are set for failure-mode identification on the final fault diagnostic measurement in transmission line pulse (TLP) testing. To identify the effect on electrost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebab07dba6f8e45e61ba807afc9ea189
https://doi.org/10.1109/tia.2017.2647918
https://doi.org/10.1109/tia.2017.2647918
Autor:
Chung-Kung Lo, Min-Hua Lee
Publikováno v:
Proceedings of the 29th European Safety and Reliability Conference (ESREL).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380988ea8e867c0de4acf5652a2a5791
https://doi.org/10.3850/978-981-11-2724-3_1011-cd
https://doi.org/10.3850/978-981-11-2724-3_1011-cd
Autor:
Min-Hua Lee, Shen-Li Chen
Publikováno v:
IETE Journal of Research. 62:752-761
N-channel metal-oxide semiconductor field-effect transistor (MOSFET) devices in I/O ESD protection circuits are often drawn in the parallel multi-finger construction. However, a non-uniform turned-on characteristic always occurs with this type of con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3bf103c20815953447d7aeb9d9a3fce
https://doi.org/10.1080/03772063.2016.1164634
https://doi.org/10.1080/03772063.2016.1164634
Publikováno v:
Annals of Nuclear Energy. 87:126-136
This study employs nuclide sensitivity coefficients to investigate the spent fuel reactivity of pressurized water reactors (PWRs) in terms of differences in predicted inventories under various depletion conditions. Considering a representative PWR sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::241e62bf38bce95b707bee305f251514
https://doi.org/10.1016/j.anucene.2015.08.025
https://doi.org/10.1016/j.anucene.2015.08.025
Publikováno v:
2017 International Conference on Applied System Innovation (ICASI).
Impacts of zapping-voltage step (ΔV) setting on the final fault-diagnostic measurement of transmission-line pulse (TLP) testing are presented in this paper. In order to identify the influence on electrostatic-discharge (ESD) immunity evaluation, thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb05af95ec45eabddff0a2ffa4b863e
https://doi.org/10.1109/icasi.2017.7988171
https://doi.org/10.1109/icasi.2017.7988171
Autor:
Shen-Li Chen, Min-Hua Lee
Publikováno v:
Research Journal of Applied Sciences, Engineering and Technology. 8:496-502
The non-uniform turned-on and low holding-Voltage (V h) issues are seriously impacted the reliability abilities of an n-channel lateral-diffused power MOSFET (nLDMOS). Therefore, basing on the drain Field-Oxide Device (FOD) structure of an nLDMOS and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e020c844333d6a76865a1256b2faac0
https://doi.org/10.19026/rjaset.8.998
https://doi.org/10.19026/rjaset.8.998