Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Min-Hsin Wu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 50-54 (2016)
The short-channel effect (SCE) is an important issue in CMOS technology. In this paper, a junctionless (JL) poly-Si nanowire FET (NW-FET) with gated raised source/drain (S/D) was demonstrated to suppress the SCE. The gated raised S/D structure enhanc
Externí odkaz:
https://doaj.org/article/43ca6c1f17e44f30ad27ac6552c44340
Autor:
Lun-Chun Chen, Mu-Shih Yeh, Yu-Ru Lin, Ko-Wei Lin, Min-Hsin Wu, Vasanthan Thirunavukkarasu, Yung-Chun Wu
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025301-025301-5 (2017)
We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor (FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) junctionless poly-Si thin-film transistors are used to demons
Externí odkaz:
https://doaj.org/article/30813557d253485998b08c763eca8106
Autor:
Min-Hsin Wu, 吳旻信
99
With Internet technology development, Web 2.0 for web service has become mainstream, people began to record their daily life in their Blog and various community sites to share their life experiences. Therefore, Web service becomes a communica
With Internet technology development, Web 2.0 for web service has become mainstream, people began to record their daily life in their Blog and various community sites to share their life experiences. Therefore, Web service becomes a communica
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/nn2y57
Autor:
Min-Hsin Wu, 吳敏欣
98
Since 1970, empowerment and strength perspectives are gradually discussed and adopted. When social work practitioners face services users, they should keep respect, acceptance and positive attitudes and help them develop the inner strengths a
Since 1970, empowerment and strength perspectives are gradually discussed and adopted. When social work practitioners face services users, they should keep respect, acceptance and positive attitudes and help them develop the inner strengths a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08931916000708004847
Autor:
Yan-Fong Lin, Bo-Chang Dong, Bo-Rui Chen, Li-Zhen Lin, Yung-Yi Chang, Min-Hsin Wu, Po-Yu Su, Bo-Cheng Chen, Wen-Jeng Hsueh, Chun-Ying Huang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abae5cd462a15bb3ad4e3fe6b86922a5
https://doi.org/10.2139/ssrn.4399109
https://doi.org/10.2139/ssrn.4399109
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 50-54 (2016)
The short-channel effect (SCE) is an important issue in CMOS technology. In this paper, a junctionless (JL) poly-Si nanowire FET (NW-FET) with gated raised source/drain (S/D) was demonstrated to suppress the SCE. The gated raised S/D structure enhanc
Autor:
Ming-Hsien Chung, Mu-Shih Yeh, Min-Hsin Wu, Yung-Chun Wu, Nan-Heng Lu, Kuan-Cheng Liu, Jhan, Min-Feng Hung
Publikováno v:
IEEE Transactions on Nanotechnology. 13:814-819
This paper develops the n-channel and p-channel twin poly-Si fin field-effect transistor nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results demonstrate that the NW device has superior memory characte
Publikováno v:
IEEE Electron Device Letters. 36:150-152
Ultrathin channel trench junctionless poly-Si field-effect transistor (trench JL-FET) with a 2.4-nm channel thickness is experimentally demonstrated. Dry etching process is used to form trench structures, which define channel thickness ( $T_{\mathrm
Publikováno v:
2014 IEEE International Electron Devices Meeting.
The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high I ON /I OFF (
Autor:
Mu-Shih Yeh, Vasanthan Thirunavukkarasu, Ko-Wei Lin, Min-Hsin Wu, Yu-Ru Lin, Yung-Chun Wu, Lun-Chun Chen
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025301-025301-5 (2017)
We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor (FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) junctionless poly-Si thin-film transistors are used to demons