Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Min-Hao Hong"'
Autor:
Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, Kuan-Ching Lee, Shiu-Ko Jang Jian, Wei-Fan Lee, Yen Chuang, Yu-Ta Fan, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 3, Pp 032150-032150-10 (2012)
B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectro
Externí odkaz:
https://doaj.org/article/d5c3a98906c945a1aa0ea730ca976625
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shen-Min Yang, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022117-022117-11 (2012)
Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B conc
Externí odkaz:
https://doaj.org/article/a08ae978fee14a61a4e03d2272d85f78
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shiu-Ko Jang Jian, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012124-012124-8 (2012)
Non-contact monitoring of Ge content and B concentration in single and double Si1-xGex epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determi
Externí odkaz:
https://doaj.org/article/212d8a7e9b6b420f87ff8e4bd282227e
Autor:
Dung-Ching Perng, Min Hao Hong
Publikováno v:
Journal of Theoretical and Applied Physics. 11:313-317
Influences of source and drain recess structures on SiGe epitaxy growth, SiGe step height, facet formation, ID,sat and resistance performance are investigated. Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ace3b1bc7cbd529cd814b4056087cb91
https://doi.org/10.1007/s40094-018-0272-5
https://doi.org/10.1007/s40094-018-0272-5
Publikováno v:
Journal of Alloys and Compounds. 695:549-554
This study reports the achievement of a high short-circuit current density (J sc ) of 9.53 mA/cm 2 for low-cost electrodeposited (ED) semi-transparent Cu 2 O/ZnO nanorod (NR) solar cells. High-quality chemical-bath-deposited ZnO NRs that align with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e3dfea52c0011d66fe380e5209a48d4
https://doi.org/10.1016/j.jallcom.2016.11.119
https://doi.org/10.1016/j.jallcom.2016.11.119
Autor:
Woo Sik Yoo, Wei-Fan Lee, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Toshikazu Ishigaki, Chun-Wei Chang, Min-Hao Hong, Kitaek Kang, Takeshi Ueda, Kuan-Ching Lee
Publikováno v:
Journal of Electronic Materials. 41:3125-3129
Undoped and B-doped epitaxial Si1−x Ge x layers on Si(100) were characterized using a long-focal-length, polychromator-based, multiwavelength micro- Raman spectroscopy system. The peak position and full-width at half-maximum of the Si–Si signal f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77325a6e3a6bc3f9e2cb3b2348607a00
https://doi.org/10.1007/s11664-012-2207-2
https://doi.org/10.1007/s11664-012-2207-2
Autor:
Woo Sik Yoo, Toshikazu Ishigaki, Wei-Fan Lee, Yen Chuang, Kitaek Kang, Yi-Hann Chen, Min-Hao Hong, Chun-Wei Chang, Kuan-Ching Lee, Yu-Ta Fan, Li-De Tseng, Takeshi Ueda
Publikováno v:
Journal of Materials Research. 27:1314-1323
Boron-doped, single (∼54 nm) or double (∼21 + 54 nm) Si1−xGex layers were epitaxially grown on 300-mm-diameter p−-Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si1−xGex/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c43c2c4b3a0333f0bce2474d1f5dec
https://doi.org/10.1557/jmr.2012.88
https://doi.org/10.1557/jmr.2012.88
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P297-P302
Room temperature photoluminescence (RTPL) and ultraviolet (UV) Raman spectra from p−-Si wafers and low-energy, low-dose boron (B) implanted n−-Si wafers, annealed under various laser power densities, were measured. The RTPL intensity from implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f83048ded494fdf6b5fcb328f66729d
https://doi.org/10.1149/2.024206jss
https://doi.org/10.1149/2.024206jss
Publikováno v:
ECS Solid State Letters. 1:P76-P78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dffdae3b931ce4f4f2e9626b4ca4847
https://doi.org/10.1149/2.011205ssl
https://doi.org/10.1149/2.011205ssl
Publikováno v:
Applied Physics Letters. 107:241113
This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu2O film and ZnO nanorods (NRs). The PVK
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a2998f4f2d4a9c2fbe9a2dba0ac446
https://doi.org/10.1063/1.4938004
https://doi.org/10.1063/1.4938004