Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Min-Han Mi"'
Autor:
Xue-Feng Zheng, Guan-Jun Chen, Xiao-Hu Wang, Ying-Zhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Min-Han Mi, Ling Lv, Yan-Rong Cao, Qing Zhu, Gang Guo, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065111-065111-5 (2020)
The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated in this work. Utilizing the frequency-dependent conductance technique, the detailed information about interface t
Externí odkaz:
https://doaj.org/article/ed243482bb06497e8689afeb8cbfcdb2
Autor:
Min-Han Mi, Xiao-Hua Ma, Ling Yang, Yang Lu, Bin Hou, Meng Zhang, Heng-Shuang Zhang, Sheng Wu, Yue Hao
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045212-045212-4 (2019)
A combination of high maximum oscillation frequency (fmax) and breakdown voltage (Vbr) was achieved in AlGaN/GaN high electron mobility transistors (HEMTs) with N2O plasma treatment on the access region. The breakdown voltage is improved from 37 V to
Externí odkaz:
https://doaj.org/article/2d805d7d82b64c62a7bbe04d000fb6c5
Autor:
Peng-Fei Wang, Min-Han Mi, Xiang Du, Yu-Wei Zhou, Jie-Long Liu, Zhi-Hong Chen, Si-Rui An, Yi-Lin Chen, Jie-Jie Zhu, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 121:072110
In this work, a high linearity AlGaN/GaN HEMT integrated dual threshold coupling (DT) technology and Schottky–Ohmic drain (SOD) were fabricated and analyzed. Since the architecture of DT synthesized planar- and recess-HEMT periodically along the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa77fe6199bd64e98f15ff860d4ef41c
https://doi.org/10.1063/5.0096542
https://doi.org/10.1063/5.0096542
Autor:
Peng-Fei Wang, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen, Yi-Lin Chen, Jie-Long Liu, Ling Yang, Bin Hou, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:102103
In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated and analyzed. Since the proposed scheme of gate dielectric and SFP eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e804b7396c6f0bc7f7c84bde9c1a6a
https://doi.org/10.1063/5.0080320
https://doi.org/10.1063/5.0080320
Autor:
Jie-Long Liu, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, Zi-Yue Zhao, Jiu-Ding Zhou, Meng Zhang, Mei Wu, Bin Hou, Hong Wang, Ling Yang, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 120:052101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3476008ce3174bbac095f176298011
https://doi.org/10.1063/5.0080120
https://doi.org/10.1063/5.0080120
Autor:
Yu-Shan Lin, Yi-Lin Chen, Ting-Chang Chang, Fong-Min Ciou, Qing Zhu, Mao‐Chou Tai, Wan-Ching Su, Ting-Tzu Kuo, Kuan-Hsu Chen, Jie-Jie Zhu, Min-Han Mi, Xiao-Hua Ma, Yue Hao
Publikováno v:
Semiconductor Science and Technology. 37:025017
In this work, a two-step degradation phenomenon in D-mode Si3N4/AlGaN/GaN metal–insulator–semiconductor-high electron mobility transistors is discussed systematically. During off-state stress, threshold voltage shifts positively for a short durat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e6ed4215b79049a01f2a5cd4e54ab6
https://doi.org/10.1088/1361-6641/ac4404
https://doi.org/10.1088/1361-6641/ac4404
Autor:
Min Han Mi, Xiaohua Ma, Bin Hou, Jia Xin Zheng, Yue Hao, Sheng Lei Zhao, Wei Wei Chen, Jincheng Zhang
Publikováno v:
IEEE Transactions on Power Electronics. 31:1517-1527
In this paper, we carried out an analysis of the breakdown characterization method by the investigation on off-state leakage currents and breakdown curves. For conventional breakdown, seven kinds of breakdown curves are summarized and it is found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d29976a3698648042f4ab6854495a0d
https://doi.org/10.1109/tpel.2015.2416773
https://doi.org/10.1109/tpel.2015.2416773
Autor:
Min-Han Mi, Xiao-Hua Ma, Ling Yang, Bin-Hou, Jie-Jie Zhu, Yun-Long He, Meng Zhang, Sheng Wu, Yue Hao
Publikováno v:
Applied Physics Letters; 10/23/2017, Vol. 111 Issue 17, p1-5, 5p
Autor:
Meng Zhang, Xiao-Hua Ma, Min-Han Mi, Yun-Long He, Bin Hou, Jia-Xin Zheng, Qing Zhu, Li-Xiang Chen, Peng Zhang, Ling Yang
Publikováno v:
Applied Physics Letters; 5/8/2017, Vol. 110 Issue 19, p1-5, 6p
Autor:
Yun-Long He, Chong Wang, Min-Han Mi, Xue-Feng Zheng, Meng Zhang, Meng-Di Zhao, Heng-Shuang Zhang, Li-Xiang Chen, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao
Publikováno v:
Chinese Physics B; Nov2016, Vol. 25 Issue 11, p1-1, 1p