Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Min-Chin Yu"'
Publikováno v:
PLoS ONE, Vol 17, Iss 4, p e0266604 (2022)
PurposeImage-guided radiation therapy (IGRT) is used to precisely deliver radiation to a tumour to reduce the possible damage to the surrounding normal tissues. Clinics use various quality assurance (QA) equipment to ensure that the performance of th
Externí odkaz:
https://doaj.org/article/03d690273c59483680ca78afa02d2bb7
Autor:
Po-Tsun Liu, Dun-Bao Ruan, Ta-Chun Chien, Yu-Chuan Chiu, Simon M. Sze, Min-Chin Yu, Kai-Jhih Gan
Publikováno v:
IEEE Transactions on Nanotechnology. 19:481-485
High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55fa614eef62d14fed5edf41344a3d8
https://doi.org/10.1109/tnano.2020.3004222
https://doi.org/10.1109/tnano.2020.3004222
Autor:
Min Chin Yu, Dun-Bao Ruan, Yu Chuan Chiu, Kai Jhih Gan, Po-Tsun Liu, Ta Chun Chien, Simon M. Sze
Publikováno v:
ACS Applied Materials & Interfaces. 11:22521-22530
In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobilit...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7e5e2bd645eaa2261b967b1b866d75b
https://doi.org/10.1021/acsami.9b04257
https://doi.org/10.1021/acsami.9b04257
Autor:
Po Yi Kuo, Kai Jhih Gan, Min Chin Yu, Ta Chun Chien, Simon M. Sze, Po-Tsun Liu, Yu Chuan Chiu, Dun-Bao Ruan, Yi Heng Chen
Publikováno v:
Thin Solid Films. 665:117-122
The electrical characteristics and XPS analysis for the amorphous tungsten and zinc doped indium oxide thin film transistor, which was performed with single or double different fluorine based remote plasma treatment, were investigated in this study.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::983a7fb5df8f246be8e535895ebf62ee
https://doi.org/10.1016/j.tsf.2018.07.053
https://doi.org/10.1016/j.tsf.2018.07.053
Autor:
Yu Chuan Chiu, Po-Tsun Liu, Kai Jhih Gan, Po Yi Kuo, Yi Heng Chen, Dun-Bao Ruan, Min Chin Yu, Simon M. Sze, Ta Chun Chien
Publikováno v:
Thin Solid Films. 666:94-99
In order to effectively enhance the carrier mobility and device stability, simultaneously, a multi-stacked active layer of thin film transistor with a novel type of channel material, amorphous indium-tungsten-oxide, is proposed in this work. Atop-cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f0d169f19d3e62a832c62e926ad478
https://doi.org/10.1016/j.tsf.2018.09.005
https://doi.org/10.1016/j.tsf.2018.09.005
Autor:
Yu Chuan Chiu, Simon M. Sze, Yi Heng Chen, Ta Chun Chien, Dun-Bao Ruan, Po-Tsun Liu, Min Chin Yu, Kai Zhi Kan, Po Yi Kuo
Publikováno v:
Thin Solid Films. 660:885-890
Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb36c0e53b5bfa04b4ee7a1f37896e56
https://doi.org/10.1016/j.tsf.2018.02.036
https://doi.org/10.1016/j.tsf.2018.02.036
Autor:
Dun-Bao Ruan, Po-Tsun Liu, Yu Chuan Chiu, Ta Chun Chien, Yi Heng Chen, Po Yi Kuo, Kai Zhi Kan, Min Chin Yu, Simon M. Sze
Publikováno v:
Thin Solid Films. 660:578-584
The amorphous indium gallium zinc oxide thin-film transistors (TFTs) with a multilayer high-k gate stack are investigated in this research. In order to achieve a high quality gate insulator for plastic flexible display application, the multilayer hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406e9162f8fe8262a7cca8483048994b
https://doi.org/10.1016/j.tsf.2018.05.024
https://doi.org/10.1016/j.tsf.2018.05.024
Autor:
Simon M. Sze, Kai-Jhih Gan, Ta-Chun Chien, Min-Chin Yu, Dun-Bao Ruan, Po-Yi Kuo, Yu-Chuan Chiu, Po-Tsun Liu
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
A novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faeb3aea6d16d13990c5f9d109255f81
https://doi.org/10.1109/isne.2018.8394633
https://doi.org/10.1109/isne.2018.8394633
Autor:
Ta-Chun Chien, Simon M. Sze, Po-Yi Kuo, Kai-Jhih Gan, Dun-Bao Ruan, Yu-Chuan Chiu, Min-Chin Yu, Po-Tsun Liu
Publikováno v:
RSC advances. 8(13)
This study investigates the electrical characteristics and physical analysis for an amorphous tungsten-doped indium-zinc oxide thin film transistor with different backchannel passivation layers (BPLs), which were deposited by an ion bombardment-free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b245d0a77f84176ff8bd8e6a49b8783b
https://pubmed.ncbi.nlm.nih.gov/35540334
https://pubmed.ncbi.nlm.nih.gov/35540334
Autor:
Simon M. Sze, Yu Chuan Chiu, Po-Tsun Liu, Kai Jhih Gan, Min Chin Yu, Dun-Bao Ruan, Yi Heng Chen, Ta Chun Chien
Publikováno v:
Advanced Electronic Materials. 5:1800824
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c06929a30780033cf3b7f9107b4bf68
https://doi.org/10.1002/aelm.201800824
https://doi.org/10.1002/aelm.201800824