Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Min-Chen Lin"'
Autor:
Min-Chen Lin, 林旻蓁
107
There are many types of single-gene disorders, which could affect a wide range of human bodies, include heart disease, metabolic abnormality, brain or neurological disorders, skin lesion, etc., and even lead to death. Nowadays, machine learn
There are many types of single-gene disorders, which could affect a wide range of human bodies, include heart disease, metabolic abnormality, brain or neurological disorders, skin lesion, etc., and even lead to death. Nowadays, machine learn
Externí odkaz:
http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5396048%22.&searchmode=basic
Publikováno v:
IEEE Transactions on Electron Devices. 58:3812-3819
SiN passivation layers were found to yield better performance, suppress the kink effect, and improve the gate leakage current and gate-induced drain leakage (GIDL) of polysilicon thin-film transistors (TFTs). The SiN passivation layers deposited unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b633681515d4f4dedb7a483c0f8adb
https://doi.org/10.1109/ted.2011.2165214
https://doi.org/10.1109/ted.2011.2165214
Publikováno v:
IEEE Electron Device Letters. 34:163-165
High-performance TaN/TiLaO/La2O3/SiO2/ (111)-Ge nMOSFETs show high mobility of 432 cm2/V ·s at 1013 cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a43e98379e18a09f9514936e462c1f37
https://doi.org/10.1109/led.2012.2230241
https://doi.org/10.1109/led.2012.2230241
Publikováno v:
IEEE Transactions on Electron Devices. 59:1807-1809
This brief investigates hydrogen instability induced by postannealing. Results show that using a SiN capping layer can prevent the release of hydrogen from a polycrystalline-silicon channel. However, removing this SiN capping layer allows the hydroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e85520f36235e9f9082877f8518ec4
https://doi.org/10.1109/ted.2012.2191411
https://doi.org/10.1109/ted.2012.2191411
Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
Publikováno v:
IEEE Electron Device Letters. 33:239-241
This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9545dbedde1746d190bd6d5a8af1437a
https://doi.org/10.1109/led.2011.2174609
https://doi.org/10.1109/led.2011.2174609
Publikováno v:
IEEE Electron Device Letters. 31:281-283
In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ee6e6e5e991d58e7544d5f3926c46ec
https://doi.org/10.1109/led.2010.2041524
https://doi.org/10.1109/led.2010.2041524
Publikováno v:
ICSSI
Based on information from preventive care and capitation pilot projects sponsored by Taiwan's Bureau of National Health Insurance (BNHI), this study modeled and analyzed the Zhishan community healthcare group (CHG) service system using a multi-agent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b1f291b0eb10aae030f97a4a9c30b9
https://doi.org/10.1109/icssi.2013.42
https://doi.org/10.1109/icssi.2013.42
Publikováno v:
Electrochemical and Solid-State Letters. 14:H30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdea76c66c3929b34976efda8d0f6e73
https://doi.org/10.1149/1.3506399
https://doi.org/10.1149/1.3506399
Publikováno v:
Pacific Asia Journal of the Association for Information Systems; Jun2014, Vol. 6 Issue 2, p1-19, 19p
Publikováno v:
IEEE Electron Device Letters; Apr2010, Vol. 31 Issue 4, p281-283, 3p