Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Min-Che Hsieh"'
Autor:
Shu-En Chen, Yung-Wen Chin, Min-Che Hsieh, Chu-Feng Liao, Tzong-Sheng Chang, Chrong-Jung Lin, Ya-Chin King
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 4, Pp 336-340 (2015)
A new self-rectifying twin-bit RRAM in a novel 3-D interweaved cross-point array has been proposed and demonstrated in 28-nm high-k metal gate CMOS back end of line (BEOL) process. This high density of array architecture with the cell size only 70 ×
Externí odkaz:
https://doaj.org/article/633218410fad4d3aa5a75c484c9b1a4f
Autor:
Yu-Cheng Liao, Hsin-Wei Pan, Min-Che Hsieh, Tzong-Sheng Chang, Yu-Der Chih, Ming-Jinn Tsai, Chrong Jung Lin, Ya-Chin King
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 149-153 (2014)
In this paper, a fully logic compatible via diode is developed for high-density resistive random access memory (RRAM) array applications. This novel via diode is realized by advanced 28nm CMOS technology with Cu damascene via. The device is stacked b
Externí odkaz:
https://doaj.org/article/d6b45b93a4f64a409847f870b948705e
Publikováno v:
International Journal of Distributed Sensor Networks, Vol 9 (2013)
This work uses a low-cost, reliable, and microchip-based wireless transmission solution to real-time collect earthquake data across local and wide areas. A transmission chain consisting of sensor units (nodes), each transmitting earthquake data unidi
Externí odkaz:
https://doaj.org/article/913b6340e9b042a398f72c0c41f223d1
Autor:
Min-Che Hsieh, 謝旻哲
105
The sense of hearing plays an important role in human’s daily life. In the case of hearing circumstances, sense of hearing not only enables people to understand the situation more clearly, but also enrich people’s life more colorful. Wit
The sense of hearing plays an important role in human’s daily life. In the case of hearing circumstances, sense of hearing not only enables people to understand the situation more clearly, but also enrich people’s life more colorful. Wit
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/fvrp8h
Autor:
Min-Che Hsieh, 謝旻哲
104
WRKY transcription factors are exclusive in plants and involved in biotic and abiotic stresses. Arabidopsis WRKY54(AT2G40750) belongs to Group III of the WRKY family and consists of a WRKY domain with zinc-finger of C2HC that specifically bi
WRKY transcription factors are exclusive in plants and involved in biotic and abiotic stresses. Arabidopsis WRKY54(AT2G40750) belongs to Group III of the WRKY family and consists of a WRKY domain with zinc-finger of C2HC that specifically bi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58194788951040432724
Autor:
Min-Che Hsieh, 謝旻哲
97
This work uses a low-cost wireless transmission solution to collect earthquake data. In the proposed architecture, a transmission chain consists of numbers of sensor units (Nodes), each of which can transmit earthquake data to the end in uni-
This work uses a low-cost wireless transmission solution to collect earthquake data. In the proposed architecture, a transmission chain consists of numbers of sensor units (Nodes), each of which can transmit earthquake data to the end in uni-
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61716155166438347151
Publikováno v:
International Journal of Molecular Sciences; Volume 23; Issue 5; Pages: 2895
WRKY transcription factors (TFs), which make up one of the largest families of TFs in the plant kingdom, are key players in modulating gene expression relating to embryogenesis, senescence, pathogen resistance, and abiotic stress responses. However,
Publikováno v:
ICME
Modeling musical timbre is critical for various music information retrieval (MIR) tasks. This work addresses the task of classifying playing techniques, which involves extremely subtle variations of timbre among different categories. A deep collabora
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A self-rectifying twin-bit RRAM in a novel 3D interweaved cross-point array has been proposed and demonstrated in 28nm CMOS BEOL process. With TaO x RRAMs on both sides of a single Via, the twin-bit RRAM cell is composed by Cu back-end layers only. E
Publikováno v:
IEEE Electron Device Letters. 34:1088-1090
In this letter, the characteristics of metal gate (MG) fuses in 28-nm complementary metal-oxide-semiconductor (CMOS) technology are investigated. Through analyzing its initial and after program characteristics, the fuse burning process is studied. Th