Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Min Who Lim"'
Autor:
Anton J. Bauer, Min Who Lim, Hoon Kyu Shin, Mathias Rommel, Hong-Ki Kim, Tomasz Sledziewski, Tobias Erlbacher, Seongjun Kim
Publikováno v:
Materials Science Forum. 1004:535-540
In this work, the influence of pre-deposition interfacial oxidation or post-deposition interface nitridation on the performance of 4H-SiC MOS capacitors was investigated. The gate oxide was deposited by LPCVD using TEOS as a precursor. Interface brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a55c516549f2b48ef0a1a977f85f4567
https://doi.org/10.4028/www.scientific.net/msf.1004.535
https://doi.org/10.4028/www.scientific.net/msf.1004.535
Autor:
Anton J. Bauer, Tobias Erlbacher, Seongjun Kim, Jonas Buettner, Nam-Suk Lee, Min Who Lim, Sang Mo Koo, Hoon Kyu Shin, Hong-Ki Kim
Publikováno v:
Materials Science Forum. 963:429-432
In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab0771b526419b36aa1aff017c85869
https://doi.org/10.4028/www.scientific.net/msf.963.429
https://doi.org/10.4028/www.scientific.net/msf.963.429