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pro vyhledávání: '"Min Ti Yang"'
Autor:
Yin Chia Lin, Min Ti Yang, Chung Yi Lin, Hao Tang Hsu, Chin Rung Yan, Huei Haurng Chen, Chih Yuan Chen, Yu Jie Liao, Jone-Fang Chen
Publikováno v:
Japanese Journal of Applied Physics. 52:04CC07
Characteristics of lateral diffused metal–oxide–semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43378a7fde434ae347828f45ad063c42
https://doi.org/10.7567/jjap.52.04cc07
https://doi.org/10.7567/jjap.52.04cc07
