Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Min Sup, Choi"'
Publikováno v:
Advanced Science, Vol 11, Iss 43, Pp n/a-n/a (2024)
Abstract The surface oxidation of 2D transition metal dichalcogenides (TMDs) has recently gained tremendous technological and fundamental interest owing to the multi‐functional properties that the surface oxidized layer opens up. In particular, whe
Externí odkaz:
https://doaj.org/article/5167a3499dad4f878c73b6818f76b740
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) mat
Externí odkaz:
https://doaj.org/article/b2b252ed44c94a8aaf7de847ef11223b
Publikováno v:
Advanced Science, Vol 10, Iss 21, Pp n/a-n/a (2023)
Abstract Achieving low contact resistance (RC) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS2 devices a
Externí odkaz:
https://doaj.org/article/74e4eb416de34a89b5729d0d8ed78953
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract Recently, 2D materials have been intensively investigated for their novel nanoelectronic applications; among these materials, tungsten diselenide (WSe2) is attracting substantial research interest due to its high mobility, sizable bandgap, a
Externí odkaz:
https://doaj.org/article/0a1cee51ca4140a2bb5972f29e2eaa89
Autor:
Tien Dat Ngo, Min Sup Choi, Myeongjin Lee, Fida Ali, Yasir Hassan, Nasir Ali, Song Liu, Changgu Lee, James Hone, Won Jong Yoo
Publikováno v:
Advanced Science, Vol 9, Iss 26, Pp n/a-n/a (2022)
Abstract Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field‐effect transistors (FETs). However, patternability
Externí odkaz:
https://doaj.org/article/a1f9af9d58fc49e7b7078d26633b5ebe
Autor:
Brian S. Y. Kim, Aaron J. Sternbach, Min Sup Choi, Zhiyuan Sun, Francesco L. Ruta, Yinming Shao, Alexander S. McLeod, Lin Xiong, Yinan Dong, Ted S. Chung, Anjaly Rajendran, Song Liu, Ankur Nipane, Sang Hoon Chae, Amirali Zangiabadi, Xiaodong Xu, Andrew J. Millis, P. James Schuck, Cory. R. Dean, James C. Hone, D. N. Basov
Publikováno v:
Nature Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f44ccf55c81fcc25e9bbfa4f13f2cd0
https://doi.org/10.1038/s41563-023-01520-5
https://doi.org/10.1038/s41563-023-01520-5
Publikováno v:
Journal of Materials Chemistry C. 10:846-853
Strong Fermi-level pinning is observed in WSe2 devices with edge contacts due to the presence of an oxide layer at the etched interface.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23eede60e42de439efb0ed0b91321f2b
https://doi.org/10.1039/d1tc04148g
https://doi.org/10.1039/d1tc04148g
Autor:
Mark E. Ziffer, Kenji Watanabe, Amirali Zangiabadi, Ipshita Datta, Younghun Jung, Bumho Kim, Apoorv Jindal, Myeongjin Lee, Min Sup Choi, Michal Lipson, James T. Teherani, James Hone, Ioannis Kymissis, Maya N. Nair, Xiaoyang Zhu, Ankur Nipane, Zachary A. Lamport, Daniel Rhodes, Abhinandan Borah, Abhay Pasupathy, B. Kim, Takashi Taniguchi, Won Jong Yoo
Publikováno v:
Nature Electronics. 4:731-739
Doped graphene could be of use in next-generation electronic and photonic devices. However, chemical doping cannot be precisely controlled in the material and leads to external disorder that diminishes carrier mobility and conductivity. Here we show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b310b8dfd4f8555fa50d7ace2ee9c387
https://doi.org/10.1038/s41928-021-00657-y
https://doi.org/10.1038/s41928-021-00657-y
Publikováno v:
ACS Applied Electronic Materials. 3:2941-2947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::845baa36de35475c5f5aceca9968b634
https://doi.org/10.1021/acsaelm.1c00225
https://doi.org/10.1021/acsaelm.1c00225
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(39)
Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57b3509563619430a41a0e22b5a1c292
https://pubmed.ncbi.nlm.nih.gov/35594170
https://pubmed.ncbi.nlm.nih.gov/35594170