Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Min Suk Suh"'
Publikováno v:
Industrial Engineering and Management Systems. 15:11-18
This paper considers a scheduling problem in a flexible job shop with a reconfigurable manufacturing cell. The flexible job shop has both operation and routing flexibilities, which can be represented in the form of a multiple process plan, i.e. each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb72388318685383a6f2cb4e8675cf98
https://doi.org/10.7232/iems.2016.15.1.011
https://doi.org/10.7232/iems.2016.15.1.011
Autor:
Min Suk Suh, Ki Bum Kim, Young Ho Kim, Nam-Seog Kim, Chanho Shin, Jeong Hwan Lee, Sung Woo Ma
Publikováno v:
Scripta Materialia. 104:21-24
Enhanced direct Cu/Cu joining by applying current was investigated. Joining was conducted at 240–300 °C for 10–50 min under 40 MPa. Current was applied to Cu wire during joining. Contact resistance of joints decreased and the fracture load of jo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb48d17029ecd621ad50ddbb3401680e
https://doi.org/10.1016/j.scriptamat.2015.03.016
https://doi.org/10.1016/j.scriptamat.2015.03.016
Autor:
Chang-Han Ryu, Min-suk Suh
Publikováno v:
The Journal of Intellectual Property. 9:241-274
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a81514b5a9a1b98240f4b51cca1718ca
https://doi.org/10.34122/jip.2014.09.9.3.241
https://doi.org/10.34122/jip.2014.09.9.3.241
Autor:
Rui Huang, Chenglin Wu, Jay Im, Ho-Young Son, Nobumichi Tamura, Paul S. Ho, Tengfei Jiang, Min Suk Suh, Martin Kunz, Byoung Gyu Kim
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:698-703
X-ray microbeam diffraction measurements were conducted for copper (Cu) through-silicon via (TSV) structures. This technique has the unique capability to measure stress and deformation in Cu and in silicon with submicron resolution, which enables dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a817242615fc42ea13b2f4e30cc88e8
https://doi.org/10.1109/tdmr.2014.2310705
https://doi.org/10.1109/tdmr.2014.2310705
Publikováno v:
Advanced Materials Research. 900:711-714
Chip to Chip bonding technology using Cu bumps with solder capping layer has been widely investigated for 3D chip stacking applications. We studied the reliability of the Cu joints. Cu bumps capped with Sn-Ag solder layer were joined to bare Cu pads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87fb9bc1d1aea8e50a49a80629fdd4ab
https://doi.org/10.4028/www.scientific.net/amr.900.711
https://doi.org/10.4028/www.scientific.net/amr.900.711
Autor:
Hae-A. Seul Shin, Sung-Hwan Hwang, Kwang-Yoo Byun, B.-J. Kim, Nobumichi Tamura, Qwan-Ho Chung, Min Suk Suh, Ho-Young Son, Young-Chang Joo, Arief Suriadi Budiman, Martin Kunz
Publikováno v:
Microelectronics Reliability. 52:530-533
Through-silicon via (TSV) has been used for 3-dimentional integrated circuits. Mechanical stresses in Cu and Si around the TSV were measured using synchrotron X-ray microdiffraction. The hydrostatic stress in Cu TSV went from high tensile of 234 MPa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c9b42ce83caa41d76f9aa56385224a
https://doi.org/10.1016/j.microrel.2011.10.016
https://doi.org/10.1016/j.microrel.2011.10.016
Autor:
Qwan-Ho Chung, Kwang-Yoo Byun, Young-Bae Park, Seung-Taek Yang, Gi-Tae Lim, Jang-Hee Lee, Min Suk Suh
Publikováno v:
Journal of the Korean Physical Society. 54:1784-1792
The e ects of severe current crowding and Joule heating on the damage morphology and the electromigration parameters were evaluated for ip chip Sn-3.5Ag solder bumps with Cu underbump metallurgy. in-situ electromigration testing in a scanning electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2085b96f60e8bad24abd60ce970452dd
https://doi.org/10.3938/jkps.54.1784
https://doi.org/10.3938/jkps.54.1784
Publikováno v:
Materials Chemistry and Physics. 110:95-99
This paper explores the growth kinetics of Cu–Sn intermetallic compounds at the interface of a Cu substrate and 42Sn–58Bi electrodeposits obtained from a methane sulphonate bath, and the effect of intermetallic compounds on the shear resistance o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d1d8763ab659892cd2c29f1f4fbd30
https://doi.org/10.1016/j.matchemphys.2008.01.021
https://doi.org/10.1016/j.matchemphys.2008.01.021
Publikováno v:
Surface and Coatings Technology. 200:3527-3532
Alloy deposits of Sn–Bi were electroplated on Cu in an organic sulphonate bath using direct or pulsed currents, and the effects of the plating parameters on the composition and microstructure of the electrodeposits were investigated. Addition of gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b7bb069d2b7b60551e345e800e174b
https://doi.org/10.1016/j.surfcoat.2004.08.162
https://doi.org/10.1016/j.surfcoat.2004.08.162
Autor:
Min Suk Suh, Nam Seog Kim, Pierre Chia, Ho Young Son, Chenglin Wu, Li Li, Peng Su, Jang-Hi Im, Paul S. Ho, Tengfei Jiang, Rui Huang
Publikováno v:
2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
In this work, the effect of high temperature storage (HTS) on the stress in and around Cu TSVs in 3D stacked chips is studied by scanning white beam x-ray microdiffraction. The x-ray microdiffraction measurements were conducted on different die level
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351f3a9809d62a82c8b5895841f9670d
https://doi.org/10.1109/ectc.2014.6897430
https://doi.org/10.1109/ectc.2014.6897430