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Akademický článek

Autor: Ashish Gaur, Jatin Sharma, Enkhtuvshin Enkhbayar, Min Su Cho, Jeong Ho Ryu, HyukSu Han

Publikováno v: EcoMat, Vol 6, Iss 9, Pp n/a-n/a (2024)

Abstract The most feasible technique for producing green hydrogen is water electrolysis. In recent years, there has been significant study conducted on the use of transition metal compounds as electrocatalysts for both anodes and cathodes. Peoples ha

Externí odkaz: https://doaj.org/article/7492ff6bfc2c4349ae83c911666028dd

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Akademický článek

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Autor: Sang Ho Lee, Won Douk Jang, Young Jun Yoon, Jae Hwa Seo, Hye Jin Mun, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, In Man Kang

Publikováno v: IEEE Access, Vol 9, Pp 50281-50290 (2021)

In this work, a capacitorless one-transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) metal–oxide–semiconductor field-effect transistor was designed and analyzed through a technology computer-aided desig

Externí odkaz: https://doaj.org/article/7d5735572be84b6daa38b0f88d5b7953

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Akademický článek

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

Autor: Jin Park, Min Su Cho, Sang Ho Lee, Hee Dae An, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sin-Hyung Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang

Publikováno v: IEEE Access, Vol 9, Pp 163675-163685 (2021)

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon nanotube structure with a grain boundary (GB) is designed and analyzed using technology computer-aided design (TCAD) simulation. T

Externí odkaz: https://doaj.org/article/5ccd72a798794e9ea26e6f74c9a37d5d

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Akademický článek

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Autor: Min Su Cho, Jae Hwa Seo, Sang Ho Lee, Hwan Soo Jang, In Man Kang

Publikováno v: IEEE Access, Vol 8, Pp 139156-139160 (2020)

To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process,

Externí odkaz: https://doaj.org/article/f7ddc6afc1a5438ba3938f5f2ebfda3c

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Akademický článek

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

Autor: Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

Publikováno v: Nanomaterials, Vol 12, Iss 19, p 3526 (2022)

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a polycrystalline silicon dual-gate metal-oxide-semiconductor field-effect transistor with a fin-shaped structure was optimized and analyzed using tech

Externí odkaz: https://doaj.org/article/53113de7cee841eb8e33e3c07ee6fdae

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Akademický článek

Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

Autor: Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang

Publikováno v: Micromachines, Vol 10, Iss 11, p 749 (2019)

In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-

Externí odkaz: https://doaj.org/article/19d823c6f17e429faf5604e1ed885e3f

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