Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Min Shun Huang"'
Autor:
Jinn-Kong Sheu, Shang Ju Tu, Kuo Hua Chang, Chih Ciao Yang, Ming-Lun Lee, Min Shun Huang, W.C. Lai, Feng Wen Huang
Publikováno v:
SPIE Proceedings.
In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b2a43f3f7250f8f594716a846437cf
https://doi.org/10.1117/12.876366
https://doi.org/10.1117/12.876366
Autor:
Chih Ciao Yang, Xin-Wei Liang, Wei-Chih Lai, Jinn-Kong Sheu, Kuo-Hua Chang, Min-Shun Huang, Shang Ju Tu, F. W. Huang, Ming-Lun Lee
Publikováno v:
Applied Physics Letters. 97:021113
InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14Ga0.86N/In0.21Ga0.79N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da39dd999665b8a9c34fc567a5e5ebf
https://doi.org/10.1063/1.3463469
https://doi.org/10.1063/1.3463469
Autor:
Yang, C. C., Sheu, J. K., Xin-Wei Liang, Min-Shun Huang, Lee, M. L., Chang, K. H., Tu, S. J., Feng-Wen Huang, Lai, W. C.
Publikováno v:
Applied Physics Letters; 7/12/2010, Vol. 97 Issue 2, p021113, 3p, 1 Chart, 3 Graphs